STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z ■ ■ ■ ■ ■ VDSS RDS(on) 500 500 500 500 < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω V V V V ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 3 2 2 1 TO-220 TO-247 3 3 12 1 D2PAK I2SPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STB20NK50ZT4 B20NK50Z D2PAK TAPE & REEL STB20NK50Z-S B20NK50Z I2SPAK TUBE STP20NK50Z P20NK50Z TO-220 TUBE STW20NK50Z W20NK50Z TO-247 TUBE May 2004 1/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 17 A ID Drain Current (continuous) at TC = 100°C 10.71 A 68 A IDM () PTOT VESD(G-S) dv/dt (1) Tj Tstg Drain Current (pulsed) Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) 6000 V 4.5 V/ns -55 to 150 °C Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤17A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-247 0.66 °C/W 62.5 50 Maximum Lead Temperature For Soldering Purpose °C/W °C 300 AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 17 A 850 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8.5 A V(BR)DSS 500 Unit 3 V 3.75 4.5 V 0.23 0.27 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS = 15 V, ID = 8.5 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 640V 13 S 2600 328 72 pF pF pF 187 pF SWITCHING ON/OFF Symbol Parameter Test Conditions td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 250 V, ID = 8.5 A RG = 4.7Ω , VGS = 10 V (Resistive Load see, Figure 3) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 17 A, VGS = 10 V Min. Typ. Max. 28 20 70 15 Unit ns ns ns ns 85 15.5 42 119 nC nC nC Typ. Max. Unit 17 68 A A 1.6 V SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 17 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 25°C (see test circuit, Figure 5) 355 3.90 22 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 150°C (see test circuit, Figure 5) 440 5.72 26 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Safe Operating Area for TO-220 / D2PAK/ I2SPAK Thermal Impedance for TO-220 / D2PAK/I2SPAK Safe Operating Area for TO-247 Thermal Impedance for TO-247 Output Characteristics Transfer Characteristics 4/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S TO-220 MECHANICAL DATA DIM. 8/13 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 0.052 F 1.23 1.32 0.048 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 3 G 1 9/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. 0.19 0.20 A 4.85 5.15 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 0.07 3.55 0.11 5º 60º V2 Dia 3 5º V 10/13 TYP 60º 3.65 0.14 0.143 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S I2SPAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. 4.60 0.173 0.181 MAX. 0.106 A 4.40 A1 2.49 2.69 0.098 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.018 0.024 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.394 0.409 G 4.88 5.28 0.192 0.208 L 16.7 17.5 0.657 0.689 L2 1.27 1.4 0.05 0.055 L3 13.82 14.42 0.544 0.568 11/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 * on sales type 12/13 0.075 0.082 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 13/13