STMICROELECTRONICS STW14NK60Z

STP14NK60Z - STP14NK60ZFP
STB14NK60Z/-1 - STW14NK60Z
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS
RDS(on)
ID
STP14NK60Z
STP14NK60ZFP
STB14NK60Z
STB14NK60Z-1
STW14NK60Z
600 V
600 V
600 V
600 V
600 V
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
Ω
Ω
Ω
Ω
Ω
13.5
13.5
13.5
13.5
13.5
■
■
■
■
■
■
Pw
A
A
A
A
A
160 W
40 W
160 W
160 W
160 W
TYPICAL RDS(on) = 0.45 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
3
1
3
2
1
2
TO-220P
TO-220
3
2
1
TO-247
3
12
3
1
I²PAK
D²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
Table 2: Order Codes
Part Number
Marking
Package
Packaging
STP14NK60Z
P14NK60Z
TO-220
TUBE
STP14NK60ZFP
P14NK60ZFP
TO-220FP
TUBE
STB14NK60ZT4
B14NK60Z
D²PAK
TAPE & REEL
STB14NK60Z-1
B14NK60Z
I²PAK
TUBE
STW14NK60Z
W14NK60Z
TO-247
TUBE
Rev. 4
September 2005
1/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/D²PAK/I²PAK
TO-247
VDS
VDGR
VGS
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
13.5
13.5 (*)
A
ID
Drain Current (continuous) at TC = 100°C
8.5
8.5 (*)
A
Drain Current (pulsed)
54
54 (*)
A
Total Dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
IDM ( )
PTOT
VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ)
dv/dt (1)
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
4000
V
4.5
V/ns
--
2500
-55 to 150
V
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤ 13.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/D²PAK/I²PAK
TO-247
TO-220FP
Unit
Rthj-case Thermal Resistance Junction-case Max
0.78
3.1
°C/W
Rthj-amb
62.5
50
°C/W
Tl
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
300
°C
Table 5: Avalanche Characteristics
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
12
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
300
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
Min.
BVGSO
Gate source Breakdown
Voltage
Igs= ± 1 mA (Open Drain)
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
V(BR)DSS
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
0.45
0.5
Ω
Typ.
Max.
Unit
3
V
Table 8: Dynamic
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Test Conditions
Min.
Forward Transconductance
VDS = 15 V, ID= 6 A
11
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2220
240
57
pF
pF
pF
Coss eq. (3) Equivalent Output Capacitance
VGS = 0V, VDS = 0V to 480V
122
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 6 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure 21)
26
18
62
13
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 12 A,
VGS = 10V
(see, Figure 24)
75
13.2
38.6
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
12
48
A
A
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 12 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 22)
490
4.7
19.3
ns
µC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 22)
664
6.8
20.5
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1.6
V
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
3/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 3: .Safe Operating Area For TO-220/
D²PAK/I²PAK
Figure 6: Thermal Impedance For TO-220/
D²PAK/I²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Safe Operating Area For TO-247
Figure 8: Thermal Impedance For TO-247
4/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 9: Output Characteristics
Figure 12: Transfer Characteristics
Figure 10: Transconductance
Figure 13: Static Drain-source On Resistance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 14: Capacitance Variations
5/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 15: Normalized Gate Thereshold Voltage vs Temperature
Figure 18: Normalized On Resistance vs Temperature
Figure 16: Source-Drain Forward Characteristics
Figure 19: Normalized BVDSS vs Temperature
Figure 17: Maximum Avalanche Energy vs
Temperature
6/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 20: Unclamped Inductive Load Test Circuit
Figure 23: Unclamped Inductive Wafeform
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 24: Gate Charge Test Circuit
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is
an ST trademark. ECOPACK specifications are available at: www.st.com
8/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
10
E1
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
9/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
MAX.
MIN.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
TYP.
MAX.
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
10/17
TYP
inch
5.50
0.216
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
MAX.
MIN.
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
0.449 0.456
F
11.4
11.6
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
11/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
0.106
e
2.40
2.70
0.094
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
12/17
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
4.6
0.173
TYP.
0.181
MAX.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
14/17
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Table 10: Revision History
Date
Revision
26-Aug-2004
06-Sep-2005
4
5
16/17
Description of Changes
New stylesheet
Inserted Ecopack indication
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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