STQ2HNK60ZR-AP STF2HNK60Z - STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID PW STQ2HNK60ZR-AP STD2HNK60Z-1 STF2HNK60Z 600 V 600 V 600 V < 4.8 Ω < 4.8 Ω < 4.8 Ω 0.5 A 2.0 A 2.0 A 3W 45 W 20 W TYPICAL RDS(on) = 4.4Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 TO-92 (Ammopack) 2 TO-220FP 3 2 1 IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STD2HNK60Z-1 D2HNK60Z IPAK TUBE STQ2HNK60ZR-AP Q2HNK60ZR TO-92 AMMOPAK STF2HNK60Z F2HNK60Z TO-220FP TUBE April 2004 1/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IPAK VDS VDGR VGS TO-220FP Unit TO-92 Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 2.0 2.0 (*) 0.5 ID Drain Current (continuous) at TC = 100°C IDM () PTOT 1.26 1.26 (*) 0.32 A Drain Current (pulsed) 8 8 (*) 2 A Total Dissipation at TC = 25°C 45 20 3 W 0.36 0.16 0.025 W/°C Derating Factor VESD(G-S) dv/dt (1) A Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature -- 2000 V 4.5 V/ns 2500 -- -55 to 150 V °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Current Limited by package THERMAL DATA IPAK TO-220FP TO-92 Rthj-case Thermal Resistance Junction-case Max 2.77 6.25 -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 62.5 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max -- -- 40 °C/W 300 300 260 °C Tl Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 2 A 120 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Min. Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.0 A V(BR)DSS 600 Unit 3 V 3.75 4.5 V 4.4 4.8 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 1.0 A VDS = 25V, f = 1 MHz, VGS = 0 1.5 S 280 38 7 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 30 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 1.0 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 10 30 23 50 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 2.0 A, VGS = 10V 11 2.25 6 15 nC nC nC Typ. Max. Unit 2.0 8.0 A A 1.6 V SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 2.0 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.0 A, di/dt = 100 A/µs VDD = 20 V, Tj = 25°C (see test circuit, Figure 5) 178 445 5 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 13 A, di/dt = 100 A/µs VDD = 20 V, Tj = 150°C (see test circuit, Figure 5) 200 500 5 ns nC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 Safe Operating Area for TO-92 Thermal Impedance for TO-92 Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Safe Operating Area for IPAK Thermal Impedance for IPAK 4/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 TYP. MAX. e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 8/12 TYP 5° 5° STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 TO-92 AMMOPACK DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 0.06 2.3 d 0.41 P0 12.5 12.7 0.09 0.56 0.016 0.022 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 F1, F2 2.44 2.54 2.94 0.09 0.1 0.11 delta H -2 2 -0.08 W 17.5 18 19 0.69 0.71 0.74 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.08 0.02 20.5 0.72 16.5 0.61 0.80 0.63 25 3.8 t 4 4.2 0.98 0.15 0.9 L 3 delta P -1 0.157 0.16 0.035 11 l1 0.65 0.43 0.11 1 -0.04 0.04 9/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 10/12 L5 1 2 3 L4 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/12 STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12