STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh™ Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 1 TO-220 DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. 12 2 3 I2PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP20NM50FD P20NM50FD TO-220 TUBE STB20NM50FD-1 August 2003 B20NM50FD-1 2 I PAK TUBE 1/9 STP20NM50FD/STB20NM50FD-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 A ID Drain Current (continuous) at TC = 100°C 14 A Drain Current (pulsed) 80 A IDM () PTOT dv/dt (1) Tstg Tj Total Dissipation at TC = 25°C 192 W Derating Factor 1.2 W/°C Peak Diode Recovery voltage slope 20 V/ns –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.65 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Max Value Unit Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 700 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA VGS(th Gate Threshold Voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10A 0.22 0.25 Ω IDSS IGSS 2/9 Test Conditions Min. Typ. Max. 500 3 Unit V STP20NM50FD/STB20NM50FD-1 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 9 S 1380 290 40 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 130 pF Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 2.8 Ω (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 250V, ID = 10 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Typ. Max. Unit 22 ns 20 ns 38 18 10 53 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 6 ns 15 ns 30 ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage ISD = 20 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 20 A, di/dt = 100A/µs, VDD = 60V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 20 A 80 A 1.5 V 245 ns 2 µC 16 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/9 STP20NM50FD/STB20NM50FD-1 Safe Operating Area For TO-220 / I²PAK Output Characteristics Transconductance 4/9 Thermal Impedance For TO-220 / I²PAK Transfer Characteristics Static Drain-source On Resistance STP20NM50FD/STB20NM50FD-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP20NM50FD/STB20NM50FD-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP20NM50FD/STB20NM50FD-1 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/9 STP20NM50FD/STB20NM50FD-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 8/9 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP20NM50FD/STB20NM50FD-1 Information furnished is believed to be accurate and reliable. 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