STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS(on) 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 3 1 2 1 TO-220 TO-220FP 3 3 12 1 2 I2PAK D PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 2 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)11NM60(-1) VDS VDGR VGS Unit STP11NM60FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 7 7 (*) A Drain Current (pulsed) 44 44 (*) A Total Dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C IDM () PTOT dv/dt(1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2003 15 -- V/ns 2500 V –65 to 150 °C 150 °C (*)Limited only by maximum temperature allowed (1)ISD<11A, di/dt<400A/µs, VDD<V (BR)DSS, T J<TJMAX 1/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-220/D2PAK/I2PAK TO-220FP 0.78 3.57 °C/W 62.5 °C/W 300 °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 5.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ±30V Min. Typ. Max. 600 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.5A Min. Typ. Max. Unit 3 4 5 V 0.4 0.45 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 5.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 5.2 S Ciss Input Capacitance 1000 pF Coss Output Capacitance 230 pF Crss Reverse Transfer Capacitance 25 pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 100 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.6 Ω RG 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300V, ID = 5.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 11A, VGS = 10V Typ. Max. Unit 20 ns 20 ns 30 nC 10 nC 15 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 11A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 6 ns 11 ns 19 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 11 A ISDM (2) Source-drain Current (pulsed) 44 A VSD (1) 1.5 V ISD Parameter Test Conditions Min. Typ. Forward On Voltage ISD = 11A, VGS = 0 trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 390 3.8 19.5 ns µC A trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 570 5.7 20 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220/D2PAK/I2PAK Safe Operating Area for TO-220FP 3/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 Thermal Impedance for TO-220/D2PAK/I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance 4/12 Static Drain-source On Resistance STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 8/12 L5 1 2 3 L4 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 9/12 1 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 10/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. 0.933 0.956 * on sales type 11/12 STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 12/12