STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 3 2 2 1 1 TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW8NB90 VDS VDGR VGS Unit STH8NB90FI Drain-source Voltage (VGS = 0) 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 8 5 A ID Drain Current (continuos) at TC = 100°C 5 3 A Drain Current (pulsed) 32 20 A Total Dissipation at TC = 25°C 200 80 W Derating Factor 1.6 0.64 W/°C IDM (●) PTOT dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature 4 - V/ns 2500 V –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. July 2001 1/9 STW8NB90 - STH8NB90FI THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max TO-247 ISOWATT218 0.625 1.56 °C/W Thermal Resistance Junction-ambient Max 30 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 8 A 700 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 900 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 4 A Min. Typ. Max. Unit 3 4 5 V 1.1 1.45 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 8 S 2120 pF Ciss Input Capacitance Coss Output Capacitance 225 pF Crss Reverse Transfer Capacitance 23 pF STW8NB90 - STH8NB90FI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 450 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 400V, ID = 9A, VGS = 10V Typ. Max. Unit 25 ns 12 ns 46 72 nC 12.5 nC 18 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 720V, ID = 7.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 22 ns 15 ns 31 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 7.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 8 A 32 A 1.6 V 700 ns 6.3 µC 18 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/9 STW8NB90 - STH8NB90FI Thermal Impedence for TO-247 Output Characteristics Transconductance 4/9 Thermal Impedence for ISOWATT218 Transfer Characteristics Static Drain-source On Resistance STW8NB90 - STH8NB90FI Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STW8NB90 - STH8NB90FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STW8NB90 - STH8NB90FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G H 10.9 15.3 0.429 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/9 STW8NB90 - STH8NB90FI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 8/9 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A STW8NB90 - STH8NB90FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9