STP22NS25Z STB22NS25Z N-CHANNEL 250V - 0.13Ω - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET TYPE STP22NS25Z STB22NS25Z ■ ■ ■ VDSS RDS(on) ID 250 V 250 V < 0.15 Ω < 0.15 Ω 22 A 22 A TYPICAL RDS(on) = 0.13 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 1 1 2 D2PAK TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 22 A ID Drain Current (continuos) at TC = 100°C 13.9 A 88 A Total Dissipation at TC = 25°C 135 W Derating Factor 1.07 W/°C Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2500 V 5 V/ns –55 to 150 °C IDM (l) PTOT VESD(G-S) dv/dt (1) Tstg Tj Drain Current (pulsed) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area January 2002 (1) ISD ≤22A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX. 1/10 STP22NS25Z / STB22NS25Z THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.93 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 22 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V, Rg = 47 Ohm) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 10 µA VDS = Max Rating, TC = 125 °C 100 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±18V ±10 µA V(BR)DSS 250 Unit V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 11 A Min. Typ. Max. Unit 2 3 4 V 0.13 0.15 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 11A VDS = 25V, f = 1 MHz, VGS = 0 Min. 22 S Ciss Input Capacitance 2400 pF Coss Output Capacitance 340 pF Crss Reverse Transfer Capacitance 120 pF STP22NS25Z / STB22NS25Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 125 V, ID = 11 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 20 A, VGS = 10V Typ. Max. Unit 20 ns 30 ns 108 151 nC 11 nC 40 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 11 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 100 78 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 22 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 37 65 110 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 22 A ISDM (2) Source-drain Current (pulsed) 88 A VSD (1) Forward On Voltage ISD = 22 A, VGS = 0 1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 22 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 292 ns 3065 nC 21 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 500µA (Open Drain) Min. 20 Typ. Max. Unit V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STP22NS25Z / STB22NS25Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/10 Static Drain-source On Resistance STP22NS25Z / STB22NS25Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP22NS25Z / STB22NS25Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP22NS25Z / STB22NS25Z TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP22NS25Z / STB22NS25Z D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 8/10 1 STP22NS25Z / STB22NS25Z D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type inch 0.933 0.956 9/10 STP22NS25Z / STB22NS25Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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