STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 1 TO-220 2 TO-220FP 12 3 I²PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)8NC50(-1) STP8NC50FP VDS VDGR VGS Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 8 8(*) A ID Drain Current (continuos) at TC = 100°C 5.4 5.4(*) A Drain Current (pulsed) 32 32(*) A Total Dissipation at TC = 25°C 135 40 W 0.32 W/°C IDM (●) PTOT Derating Factor dv/dt (1) VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj 1.075 Peak Diode Recovery voltage slope Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed December 2000 3 - V/ns 2000 V –65 to 150 °C 150 °C (1)ISD ≤8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/10 STP8NC50/FP/STB8NC50-1 THERMAL DATA Rthj-case TO-220/I2PAK TO-220FP 0.93 3.12 Thermal Resistance Junction-case Max °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 8 A 600 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 500 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA ±100 nA Max. Unit VGS = ±30V ON (1) Symbol Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4 A ID(on) On State Drain Current VGS(th) VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 4 V 0.7 0.85 Ω 8 A DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7.5 S 1050 pF Ciss Input Capacitance Coss Output Capacitance 165 pF Crss Reverse Transfer Capacitance 25 pF STP8NC50/FP/STB8NC50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 250 V, ID = 4 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Typ. Unit 19 ns 14 ns 36 VDD = 400V, ID = 8 A, VGS = 10V Max. 46 nC 5 nC 18.2 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 8 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 13 ns 15 ns 26 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD =8 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) Max. Unit 8 A 32 A 1.6 V 470 ns 3.2 µC 13.7 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP 3/10 STP8NC50/FP/STB8NC50-1 Thermal Impedence for TO-220/I2PAK Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/10 STP8NC50/FP/STB8NC50-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP8NC50/FP/STB8NC50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP8NC50/FP/STB8NC50-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP8NC50/FP/STB8NC50-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/10 L4 STP8NC50/FP/STB8NC50-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 9/10 STP8NC50/FP/STB8NC50-1 Information furnished is believed to be accurate and reliable. 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