STMICROELECTRONICS STD15N06L

STD15N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STD15N06L
■
■
■
■
■
■
■
■
■
■
V DSS
R DS( on)
ID
60 V
< 0.1 Ω
15 A
TYPICAL RDS(on) = 0.075 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
REGULATORS
■
DC-DC & DC-AC CONVERTERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VD S
V DG R
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 15
V
ID
Drain Current (continuous) at T c = 25 oC
15
A
ID
o
Drain Current (continuous) at T c = 100 C
10
A
Drain Current (pulsed)
60
A
V GS
ID M(•)
P tot
Gate-source Voltage
o
Total Dissipation at Tc = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
50
W
0.33
W/o C
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
February 1995
1/10
STD15N06L
THERMAL DATA
R thj-cas e
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3
100
1.5
275
o
Max Value
Unit
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
15
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
50
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
12
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
10
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
VG S = 0
Min.
Typ.
Max.
60
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
Unit
V
T c = 125 oC
V GS = ± 15 V
250
1000
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V G S(th)
Gate Threshold Voltage V DS = V GS
R DS( on)
Static Drain-source On
Resistance
V GS = 5V I D = 7.5 A
V GS = 5V ID = 7.5 A
I D( on)
On State Drain Current
V DS > ID( on) x RD S(on) max
V GS = 10 V
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.075
0.1
0.2
Ω
Ω
T c = 100 o C
15
A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
2/10
Parameter
Test Conditions
Forward
Transconductance
V DS > ID( on) x RD S(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 7.5 A
VG S = 0
Min.
Typ.
3
5
700
230
80
Max.
Unit
S
950
310
110
pF
pF
pF
STD15N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Typ.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 30 V ID = 7.5 A
V GS = 5 V
R G = 4.7 Ω
(see test circuit figure)
Test Conditions
15
160
60
200
ns
ns
Turn-on Current Slope
V DD = 40 V ID = 15 A
R G = 47 Ω
VGS = 5 V
(see test circuit figure)
70
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 40 V
ID = 15 A
Min.
V GS = 5 V
A/µs
18
8
9
30
nC
nC
nC
Typ.
Max.
Unit
52
100
170
80
140
240
ns
ns
ns
Typ.
Max.
Unit
15
60
A
A
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 48 V ID = 15 A
R GS = 47 Ω V GS = 10 V
(see test circuit figure)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 15 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 15 A di/dt = 100 A/µs
V DD = 25 V Tj = 150 o C
t rr
Q rr
I RRM
Min.
VG S = 0
1.5
V
60
ns
0.14
µC
5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STD15N06L
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STD15N06L
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STD15N06L
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
6/10
Fig. 2: Unclamped Inductive Waveforms
STD15N06L
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
STD15N06L
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
8/10
STD15N06L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
=
G
2
1
B2
=
=
=
E
=
3
B
DETAIL ”A”
L4
0068772-B
9/10
STD15N06L
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
10/10