STB8NS25 N-CHANNEL 250V - 0.38Ω - 8A D2PAK MESH OVERLAY MOSFET ■ ■ ■ TYPE VDSS RDS(on) ID STB8NS25 250 V < 0.45 Ω 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V VGS Gate- source Voltage ± 20 V ID (*) Drain Current (continuos) at TC = 25°C 8 A ID Drain Current (continuos) at TC = 100°C 5 A Drain Current (pulsed) 32 A IDM (●) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area July 2001 80 W 0.64 W/°C 5 V/ns –65 to 150 °C 150 °C (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj≤TjMAX (*)Limited only by maximum temperature allowed 1/9 STB8NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 8 A 300 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. Typ. Max. 250 Unit V 1 VDS = Max Rating, TC = 125 °C µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 4 A Min. Typ. Max. Unit 2 3 4 V 0.38 0.45 Ω Min. Typ. Max. Unit 7 8 S 770 pF DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 4A VDS = 25V, f = 1 MHz, VGS = 0 C iss Input Capacitance Coss Output Capacitance 118 pF Crss Reverse Transfer Capacitance 48 pF STB8NS25 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 125 V, ID = 4 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 13 ns 18 ns VDD = 200V, I D = 8 A, VGS = 10V 37 51.8 nC 5.2 nC 14.8 nC SWITCHING OFF Symbol Parameter Test Condit ions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 4 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 51 16 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 8 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 12.5 12.5 28 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.7 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 8 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 198 ns 1.1 µC 11.3 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STB8NS25 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB8NS25 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB8NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB8NS25 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB8NS25 TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A TAPE MECHANICAL DATA DIM. 8/9 mm inch MIN. MAX. MIN. MAX. A0 B0 10.5 15.7 10.7 15.9 0.413 0.421 0.618 0.626 D D1 1.5 1.59 1.6 1.61 0.059 0.063 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 P0 4.8 3.9 5.0 4.1 0.189 0.197 0.153 0.161 P1 P2 11.9 1.9 12.1 2.1 0.468 0.476 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 1.574 W 23.7 24.3 0.933 0.956 B 1.5 C 12.8 D G 20.2 24.4 N T 100 MAX. 330 inch MIN. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0795 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB8NS25 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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