STP20NM60FD - STF20NM60D STW20NM60FD N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh™ POWER MOSFET (with FAST DIODE) TYPE STP20NM60FD STF20NM60D STW20NM60FD VDSS RDS(on) ID Pw 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 192 W 45 W 214 W 3 n n n n n n TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 1 TO-220 2 TO-220FP 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT n ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP20NM60FD P20NM60FD TO-220 TUBE STF20NM60D F20NM60D TO-220FP TUBE STW20NM60FD W20NM60FD TO-247 TUBE June 2003 1/11 STP20NM60FD - STF20NM60D - STW20NM60FD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP20NM60FD VDS VDGR VGS STF20NM60D Unit STW20NM60FD Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 20 20 (*) 20 A ID Drain Current (continuous) at TC = 100°C IDM () PTOT dv/dt (1) 12.6 12.6 (*) 12.6 A Drain Current (pulsed) 80 80 (*) 80 A Total Dissipation at TC = 25°C 192 45 214 W Derating Factor 1.20 0.36 1.42 W/°C - 2500 Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature 20 V/ns - V °C °C – 65 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Temperature For Soldering Purpose TO-220 TO-220FP TO-247 0.65 2.8 0.585 °C/W 30 °C/W 62.5 300 °C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 700 mJ 2/11 STP20NM60FD - STF20NM60D - STW20NM60FD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10 A V(BR)DSS Min. Typ. Max. 600 3 Unit V 1 10 µA µA ±100 µA 4 5 V 0.26 0.29 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 9 S 1310 580 30 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 190 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 2.7 Ω SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300V, ID = 10A RG = 4.7Ω VGS = 10V (Resistive Load see, Figure 3) 25 12 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 20A, VGS = 10V 37 10 17 52 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 480 V, ID = 20A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 8 22 30 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 20 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD = 60 V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 340 2.8 17 Max. Unit 20 80 A A 1.5 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 3/11 STP20NM60FD - STF20NM60D - STW20NM60FD Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For TO-247 Thermal Impedance For TO-247 4/11 STP20NM60FD - STF20NM60D - STW20NM60FD Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/11 STP20NM60FD - STF20NM60D - STW20NM60FD Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics 6/11 Normalized On Resistance vs Temperature STP20NM60FD - STF20NM60D - STW20NM60FD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP20NM60FD - STF20NM60D - STW20NM60FD TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP20NM60FD - STF20NM60D - STW20NM60FD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/11 STP20NM60FD - STF20NM60D - STW20NM60FD TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 3.70 4.30 0.14 18.50 øP 3.55 3.65 0.140 4.50 5.50 0.177 5.50 0.582 0.17 0.728 øR S 0.620 0.214 L1 L2 10/11 TYP 0.143 0.216 0.216 STP20NM60FD - STF20NM60D - STW20NM60FD Information furnished is believed to be accurate and reliable. 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