STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS(on) ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 3 1 2 I2PAK TO-220 3 1 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP11NM60A P11NM60A TO-220 TUBE STP11NM60AFP P11NM60AFP TO-220FP TUBE STB11NM60A-1 B11NM60A I2PAK TUBE March 2002 1/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP11NM60A STB11NM60A-1 VDS VDGR VGS 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C 110 Derating Factor 0.88 PTOT dv/dt (1) STP11NM60AFP Drain-source Voltage (VGS = 0) ID IDM (l) Unit 11 11 (*) A 7 7 (*) A 44 44 (*) A 35 W 0.28 W/°C Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature 15 V/ns - 2500 V -55 to 150 -55 to 150 °C °C (l) Pulse width limited by safe operating area (1) I SD ≤11A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 / I2PAK TO-220-FP 1.13 3.57 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W ON/OFF Symbol V(BR)DSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.5 A 2/11 Min. Typ. Max. 600 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.4 0.45 Ω STP11NM60A/STP11NM60AFP/STB11NM60A-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 5.5 A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 10 S 1211 248 21 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 116 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.9 Ω SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 5.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 14 15 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 11 A, VGS = 10V 35 9 14 49 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 480V, ID = 11 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 39 10 20 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 11 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 560 5.7 20.5 Max. Unit 11 44 A A 1.5 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Safe Operating Area for TO-220 / I2PAK Safe Operating Area for TO-220FP Thermal Impedance for TO-220 / I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics 4/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Source-drain Diode Forward Characteristics 6/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/11 L4 P011C STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 9/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 10/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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