STMICROELECTRONICS STP11NM60AFP

STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK
MDmesh™Power MOSFET
TYPE
STP11NM60A
STP11NM60AFP
STB11NM60A-1
n
n
n
n
VDSS
RDS(on)
ID
600 V
600 V
600 V
<0.45Ω
<0.45Ω
<0.45Ω
11 A
11 A
11 A
TYPICAL RDS(on) = 0.4Ω
HIGH dv/dt
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
3
12
3
1
2
I2PAK
TO-220
3
1
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP11NM60A
P11NM60A
TO-220
TUBE
STP11NM60AFP
P11NM60AFP
TO-220FP
TUBE
STB11NM60A-1
B11NM60A
I2PAK
TUBE
March 2002
1/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP11NM60A
STB11NM60A-1
VDS
VDGR
VGS
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
110
Derating Factor
0.88
PTOT
dv/dt (1)
STP11NM60AFP
Drain-source Voltage (VGS = 0)
ID
IDM (l)
Unit
11
11 (*)
A
7
7 (*)
A
44
44 (*)
A
35
W
0.28
W/°C
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
15
V/ns
-
2500
V
-55 to 150
-55 to 150
°C
°C
(l) Pulse width limited by safe operating area
(1) I SD ≤11A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 / I2PAK
TO-220-FP
1.13
3.57
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
ON/OFF
Symbol
V(BR)DSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5.5 A
2/11
Min.
Typ.
Max.
600
2
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.4
0.45
Ω
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
RG
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS = 15 V, ID = 5.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
10
S
1211
248
21
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
116
pF
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.9
Ω
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 5.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
14
15
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 11 A,
VGS = 10V
35
9
14
49
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
VDD = 480V, ID = 11 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
39
10
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 11 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
560
5.7
20.5
Max.
Unit
11
44
A
A
1.5
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Safe Operating Area for TO-220 / I2PAK
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220 / I2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
4/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Source-drain Diode Forward Characteristics
6/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
8/11
L4
P011C
STP11NM60A/STP11NM60AFP/STB11NM60A-1
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
4.6
0.173
TYP.
MAX.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
L2
16
0.630
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
9/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
10/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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