STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω 0.3 A 0.8 A 0.3 A 3W 25 W 3.3 W ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 13Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) TO-92 2 3 2 1 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. IPAK 2 3 SOT-223 Figure 2: Internal Schematic Diagram APPLICATIONS ■ AC ADAPTORS AND BATTERY CHARGERS ■ SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STQ1NK60ZR Q1NK60ZR TO-92 BULK STQ1NK60ZR-AP Q1NK60ZR TO-92 AMMOPAK STD1LNK60Z-1 D1LNK60Z IPAK TUBE STN1NK60Z N1NK60Z SOT-223 TAPE & REEL Rev. 6 September 2005 1/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Table 3: Absolute Maximum ratings Symbol Parameter Value IPAK VDS VDGR VGS TO-92 Unit SOT-223 Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.8 0.3 0.3 A ID Drain Current (continuous) at TC = 100°C 0.5 0.189 0.189 A Drain Current (pulsed) 3.2 1.2 1.2 A Total Dissipation at TC = 25°C 25 3 3.3 W 0.025 0.026 W/°C IDM ( ) PTOT Derating Factor VESD(G-S) dv/dt (1) Tj Tstg 0.24 Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V Peak Diode Recovery voltage slope 4.5 V/ns -55 to 150 °C Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤0.3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthj-lead Thermal Resistance Junction-lead Max Tl Maximum Lead Temperature For Soldering Purpose IPAK TO-92 SOT-223 5 -- -- °C/W 100 120 37.87(#) °C/W -- 40 -- °C/W 275 260 260 °C (#) When mounted on 1 inch² Fr-4 board, 2 Oz Cu Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 0.8 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 60 mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Min. Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.4 A 3 V 3.75 4.5 V 13 15 Ω Typ. Max. Unit Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Test Conditions Min. Forward Transconductance VDS = V, ID = 0.4 A 0.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 94 17.6 2.8 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 11 pF ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 300V, ID = 0.4 A RG = 4.7Ω VGS = 10 V (see Figure 21) 5.5 5 13 28 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 0.8 A, VGS = 10V (see Figure 25) 4.9 1 2.7 6.9 nC nC nC Typ. Max. Unit 0.8 2.4 A A 1.6 V Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 0.8A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 23) 135 216 3.2 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 23) 140 224 3.2 ns nC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 3: Safe Operating Area for IPAK Figure 6: Thermal Impedance for IPAK Figure 4: Safe Operating Area for TO-92 Figure 7: Thermal Impedance for TO-92 Figure 5: Safe Operating Area for SOT-223 Figure 8: Thermal Impedance for SOT-223 4/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Statis Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variation 5/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 15: Normalized Gate Thereshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Diode Forward Characteristics Figure 19: Normalized BVdss vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature Figure 20: Max Id Current vs Tc 6/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 21: Unclamped Inductive Load Test Circuit Figure 24: Unclamped Inductive Wafeform Figure 22: Switching Times Test Circuit For Resistive Load Figure 25: Gate Charge Test Circuit Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z TO-92 AMMOPACK DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 2.3 0.56 0.06 0.09 d 0.41 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 2.54 2.94 0.09 0.1 0.11 2 -0.08 19 0.69 0.71 0.74 F1, F2 2.44 delta H -2 W 17.5 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 18 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.08 0.02 20.5 0.72 0.80 16.5 0.61 0.63 0.65 0.15 0.157 0.16 25 3.8 4 4.2 t 0.9 L 11 l1 3 delta P -1 0.98 0.035 0.43 0.11 1 -0.04 0.04 9/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 10/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. TYP 4.95 0.170 TYP. 0.194 MAX. b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 11/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 12/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Table 10: Revision History Date Revision 19-Mar-2003 15-May-2003 09-Jun-2003 17-Nov-2004 15-Feb-2005 07-Sep-2005 1 2 3 4 5 6 Description of Changes First Release Removed DPAK Final Datasheet Inserted SOT-223. Modified Curve 4 Inserted Ecopack indication 13/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14