STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 ■ ■ ■ ■ ■ ■ VDS S RDS(o n) ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE 3 1 APPLICATIONS ■ SYNCROUNOUS RECTIFIERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ DC-DC & DC-AC CONVERTER ABSOLUTE MAXIMUM RATINGS 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS Parameter Drain-source Voltage (VGS = 0) VDGR Drain- gate Vol tage (R GS = 20 kΩ) V GS Gate-s ource Voltage o Value Unit 50 V 50 V ± 20 V ID Drain Current (conti nuous) at Tc = 25 C 80 A ID o 60 A I DM (•) Pt ot Drain Current (conti nuous) at Tc = 100 C Drain Current (pulsed) 320 A Total Dis sipation at Tc = 25 o C 150 W 1 W/ oC 5 V/ns Derating Fac tor dV/dt(1 ) Peak Diode Recov ery vo ltage slo pe Tstg Tj Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area March 1997 -65 to 175 o C 175 o C (1) ISD ≤ 60 A, di/dt ≤ 200 A/ms, V DD ≤ V(BR)DSS, TJ ≤ TJMAX 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb R thc-sin k Tl Thermal Resist ance Junc tion-case Max Thermal Resist ance Junc tion-ambi ent Max Thermal Resist ance Case -sink Typ Max imum Lead Temperature For Sol dering Purpose o 1 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limit ed by Tj max , δ < 1%) E AS Sin gle Pul se Aval anc he Energy o (starting Tj = 25 C, ID = I AR , V DD = 25 V) Max Value Unit 60 A 600 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V(BR)DSS Parameter Drain-so urce Breakdown Voltage Test Conditions I D = 250 µA Min. VGS = 0 IDS S Zero G ate Voltage VDS = Max Rating Drain Current (VG S = 0) VDS = Max Rating I GSS Gate-body Leak age Current (VDS = 0) Typ. Max. 50 Unit V Tc = 125 oC VG S = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions VGS( th) Gate Threshold Voltage VDS = V GS RDS( on) Static Drai n-s ource On Resistance I D(on) Min. ID = 250 µA 2 VG S = 10V I D = 40 A On State Drai n Current VDS > I D(on) x R DS(on)max VG S = 10 V Typ. 3 4 V 0.007 0.009 Ω 80 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance VDS > I D(on) x R DS(on)max Input Capac itance Output Capacitance Reverse Trans fer Capacitance VDS = 25 V f = 1 MHz Min. ID = 40 A VGS = 0 Typ. Max. Unit 25 S 5900 900 230 pF pF pF STP80N05-09 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/ dt)on Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 42 200 ns ns Turn-on Time Rise Time VDD = 30 V ID = 40 A RG = 4.7 Ω V GS = 10 V (see test circuit, figure 3) 32 160 Turn-on Current Slope VDD = 48 V ID = 80 A RG =5 0 Ω VGS = 10 V (see test circuit, figure 5) 240 Total Ga te Charge Gate-Source Charge Gate-Drain Charge VDD = 40 V 230 30 60 280 nC nC nC Typ. Max. Unit 35 175 240 46 230 300 ns ns ns Typ. Max. Unit 80 320 A A 1.5 V I D = 80 A V GS = 10 V A/µs SWITCHING OFF Symbol tr(Vof f) tf tc Parameter Off-volt age Rise Time Fal l Time Cross-over Time Test Conditions Min. VDD = 48 V ID = 40 A V GS = 10 V RG = 4.7 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD ISD M (•) Source-drain Current Source-drain Current (pulsed) VSD (∗) Forward On Voltage I SD = 80 A Reverse Recovery Tim e Reverse Recovery Charge Reverse Recovery Current I SD = 80 A t rr Qrr I RRM Min. VGS = 0 di/dt = 100 A/µs VR = 30 V Tj = 150 o C (see test circuit, figure 5) 125 ns 0.6 µC 10 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STP80N05-09 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STP80N05-09 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STP80N05-09 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/9 Fig. 2: Unclamped Inductive Waveform STP80N05-09 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STP80N05-09 TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. MAX. 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/9 L4 P011C STP80N05-09 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9