STMICROELECTRONICS STPS10L45CFP

STPS10L45CT/CG/CF/CFP
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
2x5 A
VRRM
45 V
Tj (max)
150°C
VF (max)
0.46 V
A1
K
A2
K
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
INSULATED
PACKAGE:
ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
■
A2
A2
■
■
K
A1
TO-220FPAB
STPS10L45CFP
A1
D2PAK
STPS10L45CG
■
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB and D2PAK, these devices are
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
A1
TO-220AB
STPS10L45CT
Parameter
Repetitive peak reverse voltage
RMS forward current
Average
forward current
A2
A2
K
A1
K
ISOWATT220AB
STPS10L45CF
Value
45
Unit
V
20
A
TO-220AB
D2PAK
Tc =135°C
δ = 0.5
Per diode
Per device
5
10
A
ISOWATT220AB
TO-220FPAB
Tc =115°C
δ = 0.5
Per diode
Per device
5
10
A
150
A
A
Surge non repetitive forward current
tp = 10 ms Sinusoidal
IRRM
Repetitive peak reverse current
tp = 2 µs square F=1kHz
1
IRSM
Non repetitive peak reverse current
tp = 100 µs
2
A
PARM
Repetitive peak avalanche power
tp = 1µs
2700
W
- 65 to + 150
°C
150
°C
Tstg
Tj
Storage temperature range
Maximum operating junction temperature *
dV/dt
square
Tj = 25°C
10000
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
* :
<
dTj
Rth( j − a )
July 2003 - Ed: 3B
V/µs
1/7
STPS10L45CT/CG/CF/CFP
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
Junction to case
TO-220AB
D2PAK
Value
Unit
Per diode
Total
3
1.7
°C/W
Coupling
0.35
Per diode
Total
5
3.8
Coupling
2.5
Rth (c)
Rth (j-c)
Junction to case
ISOWATT220AB
TO-220FPAB
Rth (c)
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Tests Conditions
Min.
Typ.
VR = VRRM
Reverse leakage
current
Tj = 25°C
Forward voltage drop
Tj = 25°C
IF = 5 A
Tj = 125°C
IF = 5 A
Tj = 25°C
IF = 10 A
Tj = 125°C
IF = 10 A
Max.
Unit
0.15
mA
90
mA
0.53
V
45
Tj = 125°C
0.36
0.46
0.67
0.49
0.59
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
IF(av)(A)
3.5
3.0
δ = 0.1
δ = 0.2
6
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.05
5
2.5
δ=1
2.0
4
TO-220AB/D²PAK
3
TO-220FPAB
ISOWATT220AB
1.5
1.0
0.5
T
tp
δ=tp/T
IF(av) (A)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
2/7
2
T
Rth(j-a)=15°C/W
1
0
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
STPS10L45CT/CG/CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB and D2PAK).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1E-3
0
1000
125
150
70
60
50
Tc=25°C
Tc=25°C
40
Tc=75°C
Tc=75°C
30
Tc=125°C
t
1E-2
1E-1
1E+0
t
t(s)
δ=0.5
0
1E-3
1E-2
1E-1
1E+0
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
0.8
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
T
0.2
Single pulse
δ=tp/T
tp(s)
1E-2
Tc=125°C
IM
10
t(s)
δ=0.5
20
1.0
0.0
1E-3
100
IM(A)
Zth(j-c)/Rth(j-c)
0.2
75
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values,
per
diode)
(ISOWATT220AB,
TO-220FPAB).
1.0
0.4
50
80
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D2PAK).
0.6
25
1E-1
δ = 0.5
δ = 0.2
tp
1E+0
T
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
δ=tp/T
1E+0
tp
1E+1
3/7
STPS10L45CT/CG/CF/CFP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
C(pF)
1E+2
1000
F=1MHz
Tj=25°C
Tj=150°C
1E+1
Tj=125°C
Tj=100°C
1E+0
100
1E-1
1E-2
Tj=25°C
VR(V)
VR(V)
1E-3
0
5
10
15
20
25
30
35
40
45
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
10
1
2
5
10
20
50
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)( D2PAK).
Rth(j-a) (°C/W)
IFM(A)
80
Tj=150°C
Typical values
70
60
10.0
50
40
Tj=125°C
30
1.0
Tj=25°C
20
10
VFM(V)
0.1
0.0
4/7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
S(Cu) (cm²)
0
4
8
12
16
20
24
28
32
36
40
STPS10L45CT/CG/CF/CFP
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
A
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
G1
E
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.70
0.018
0.027
0.75
1
0.030
0.039
1.15
1.70
0.045
0.067
1.15
1.70
0.045
0.067
4.95
5.20
0.195
0.205
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
16 Typ.
0.63 Typ.
28.6
30.6
1.126
1.205
9.8
10.6
0.386
0.417
2.9
3.6
0.114
0.142
15.9
16.4
0.626
0.646
9.00
9.30
0.354
0.366
3.00
3.20
0.118
0.126
G
5/7
STPS10L45CT/CG/CF/CFP
PACKAGE MECHANICAL DATA
D2PAK
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
6/7
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
STPS10L45CT/CG/CF/CFP
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
■
■
■
■
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.50
2.70
0.098
0.106
2.50
2.75
0.098
0.108
0.40
0.70
0.016
0.028
0.75
1.00
0.030
0.039
1.15
1.70
0.045
0.067
1.15
1.70
0.045
0.067
4.95
5.20
0.195
0.205
2.40
2.70
0.094
0.106
10.00
10.40
0.394
0.409
16.00 typ.
0.630 typ.
28.60
30.60
1.125
1.205
9.80
10.60
0.386
0.417
15.90
16.40
0.626
0.646
9.00
9.30
0.354
0.366
3.00
3.20
0.118
0.126
Ordering type
Marking
Package
Weight
Base qty
STPS10L45CT
STPS10L45CFP
STPS10L45CG
STPS10L45CG-TR
STPS10L45CF
STPS10L45CT
STPS10L45CFP
STPS10L45CG
STPS10L45CG
STPS10L45CF
TO-220AB
TO-220FPAB
D²PAK
D²PAK
ISOWATT220AB
2.23g
2g
1.48g
1.48g
2.08g
50
50
50
1000
50
Delivery
mode
Tube
Tube
Tube
Tape & reel
Tube
Cooling method : by conduction (C)
Recommended torque value : 0.55 N.m.
Maximum torque value : 0.70 N.m.
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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