STMICROELECTRONICS STPS20S1Z00CR

STPS20S100C
®
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
2 x 10 A
VRRM
100 V
Tj
175°C
VF(max)
0.71 V
A1
K
A2
FEATURES AND BENEFITS
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High junction temperature capability for
converters located in confined enrironment
Low leakage current at high temperature
Low static and dynamic losses as a result of the
Schottky barrier
Avalanche specification
A1
K
A2
K
A1
A2
TO-220AB
STPS20S100CT
TO-220FPAB
STPS20S100CFP
K
DESCRIPTION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board DC/DC
converters. Packaged in TO-220AB, I2PAK and
TO-220FPAB.
A2
A1
K
I2PAK
STPS20S100CR
Table 2: Order Codes
March 2005
Part Numbers
Marking
STPS20S100CT
STPS20S100CT
STPS20S100CFP
STPS20S100CFP
STPS20S100CR
STPS20S100CR
REV. 1
1/7
STPS20S100C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Value
Unit
Repetitive peak reverse voltage
100
V
RMS forward voltage
30
A
TO-220AB /
Average forward current I2PAK
δ = 0.5
TO-220FPAC
Tc = 150°C
Per diode
Per device
10
20
Tc = 140°C
Per diode
Per device
10
20
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
7200
W
-65 to + 175
°C
175
°C
10000
V/µs
IF(AV)
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
A
dPtot
1
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
Rth ( j – a )
dTj
Table 4: Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to case
Value
2
TO-220AB / I PAK
Rth(c)
Rth(j-c)
Junction to case
TO-220FPAB
Rth(c)
Per diode
2.2
Total
1.3
Coupling
0.3
Per diode
4.5
Total
3.5
Coupling
2.5
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
IR *
Reverse leakage current
Tests conditions
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VF **
Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Pulse test:
Min.
VR = VRRM
1.3
Max.
Unit
3.5
µA
4.5
mA
0.73
IF = 5A
0.57
0.61
0.85
IF = 10A
0.66
0.71
0.94
IF = 20A
0.74
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF (RMS)
2/7
Typ
0.80
V
STPS20S100C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
PF(AV)(W)
IF(AV)(A)
10
δ = 0.1
9
δ = 0.2
δ = 0.5
11
Rth(j-a)=Rth(j-c)
δ = 0.05
I²PAK/TO-220AB
10
8
9
TO-220FPAB
8
7
δ=1
6
7
Rth(j-a)=15°C/W
6
5
5
4
4
3
3
T
2
T
2
1
1
IF(AV)(A)
δ=tp/T
0
tp
δ=tp/T
0
0
0
1
2
3
4
5
6
7
8
9
10
Figure 3: Normalized avalanche
derating versus pulse duration
11
12
Tamb(°C)
tp
25
50
75
100
125
150
175
13
power
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
1
1.2
power
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
25
50
75
100
125
150
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
IM(A)
180
120
160
110
140
100
90
120
80
100
70
Ta=25°C
80
Ta=75°C
50
40
60
40
Ta=25°C
60
Ta=75°C
Ta=125°C
30
IM
20
IM
20
t
10
t
Ta=125°C
t(s)
δ=0.5
0
0
1.E-03
1.E-03
1.E-02
t(s)
δ=0.5
1.E-01
1.E-02
1.E-01
1.E+00
1.E+00
3/7
STPS20S100C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode)
Figure 8: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode) (TO-220FPAB)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.6
0.7
δ = 0.5
0.6
0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.3
T
0.2
0.2
0.1
δ = 0.5
0.4
T
δ = 0.2
δ = 0.1
0.1
Single pulse
tp
1.E-03
1.E-02
1.E-01
δ=tp/T
tp
0.0
0.0
1.E-03
tp(s)
Single pulse
δ=tp/T
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+00
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
IR(mA)
C(pF)
1.E+01
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+00
Tj=125°C
1.E-01
Tj=100°C
100
Tj=75°C
1.E-02
Tj=50°C
1.E-03
Tj=25°C
VR(V)
VR(V)
10
1.E-04
10
20
30
40
50
60
70
80
90
100
Figure 9: Forward voltage drop versus forward
current (per diode)
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
10
VFM(V)
1
0.0
4/7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
STPS20S100C
Figure 10: TO-220FPAB Package Mechanical Data
REF.
A
B
H
Dia
L6
L7
L2
L3
L5
D
F1
L4
F2
F
E
G1
G
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.018
0.027
0.75
1
0.03
0.039
1.15
1.7
0.045
0.067
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.205
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
16
Typ.
0.63
Typ.
28.6
30.6
1.126
1.205
9.8
10.6
0.386
0.417
2.9
3.6
0.114
0.142
15.9
16.4
0.626
0.646
9
9.3
0.354
0.366
3
3.2
0.118
0.126
Figure 11: I2PAK Package Mechanical Data
REF.
DIMENSIONS
Millimeters
A
E
A
c2
L2
D
L1
A1
b1
L
b
e
c
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.70
0.044
0.067
b2
1.14
1.70
0.044
0.067
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
e1
5/7
STPS20S100C
Figure 12: TO-220AB Package Mechanical Data
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
Table 6: Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS20S100CT
STPS20S100CT
TO-220AB
2.20 g
50
Tube
STPS20S100CFP
STPS20S100CFP
TO-220FPAB
2g
50
Tube
STPS20S100CR
STPS20S100CR
I2PAK
1.49 g
50
Tube
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Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Table 7: Revision History
6/7
Date
Revision
16-Mar-2005
1
Description of Changes
First issue.
STPS20S100C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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