STPS20S100C ® POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) 2 x 10 A VRRM 100 V Tj 175°C VF(max) 0.71 V A1 K A2 FEATURES AND BENEFITS ■ ■ ■ ■ High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier Avalanche specification A1 K A2 K A1 A2 TO-220AB STPS20S100CT TO-220FPAB STPS20S100CFP K DESCRIPTION Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, I2PAK and TO-220FPAB. A2 A1 K I2PAK STPS20S100CR Table 2: Order Codes March 2005 Part Numbers Marking STPS20S100CT STPS20S100CT STPS20S100CFP STPS20S100CFP STPS20S100CR STPS20S100CR REV. 1 1/7 STPS20S100C Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 100 V RMS forward voltage 30 A TO-220AB / Average forward current I2PAK δ = 0.5 TO-220FPAC Tc = 150°C Per diode Per device 10 20 Tc = 140°C Per diode Per device 10 20 IFSM Surge non repetitive forward current tp = 10ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 7200 W -65 to + 175 °C 175 °C 10000 V/µs IF(AV) Tstg Tj dV/dt Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage A dPtot 1 * : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j – a ) dTj Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case Value 2 TO-220AB / I PAK Rth(c) Rth(j-c) Junction to case TO-220FPAB Rth(c) Per diode 2.2 Total 1.3 Coupling 0.3 Per diode 4.5 Total 3.5 Coupling 2.5 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol Parameter IR * Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test: Min. VR = VRRM 1.3 Max. Unit 3.5 µA 4.5 mA 0.73 IF = 5A 0.57 0.61 0.85 IF = 10A 0.66 0.71 0.94 IF = 20A 0.74 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF (RMS) 2/7 Typ 0.80 V STPS20S100C Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) IF(AV)(A) 10 δ = 0.1 9 δ = 0.2 δ = 0.5 11 Rth(j-a)=Rth(j-c) δ = 0.05 I²PAK/TO-220AB 10 8 9 TO-220FPAB 8 7 δ=1 6 7 Rth(j-a)=15°C/W 6 5 5 4 4 3 3 T 2 T 2 1 1 IF(AV)(A) δ=tp/T 0 tp δ=tp/T 0 0 0 1 2 3 4 5 6 7 8 9 10 Figure 3: Normalized avalanche derating versus pulse duration 11 12 Tamb(°C) tp 25 50 75 100 125 150 175 13 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(1µs) 1 1.2 power PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 0 1000 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 25 50 75 100 125 150 Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB) IM(A) IM(A) 180 120 160 110 140 100 90 120 80 100 70 Ta=25°C 80 Ta=75°C 50 40 60 40 Ta=25°C 60 Ta=75°C Ta=125°C 30 IM 20 IM 20 t 10 t Ta=125°C t(s) δ=0.5 0 0 1.E-03 1.E-03 1.E-02 t(s) δ=0.5 1.E-01 1.E-02 1.E-01 1.E+00 1.E+00 3/7 STPS20S100C Figure 7: Relative variation of thermal impedance junction to case versus pulse duration (per diode) Figure 8: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220FPAB) Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.6 0.7 δ = 0.5 0.6 0.5 0.5 0.4 δ = 0.2 0.3 δ = 0.1 0.3 T 0.2 0.2 0.1 δ = 0.5 0.4 T δ = 0.2 δ = 0.1 0.1 Single pulse tp 1.E-03 1.E-02 1.E-01 δ=tp/T tp 0.0 0.0 1.E-03 tp(s) Single pulse δ=tp/T tp(s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+00 Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) IR(mA) C(pF) 1.E+01 1000 F=1MHz VOSC=30mVRMS Tj=25°C Tj=150°C 1.E+00 Tj=125°C 1.E-01 Tj=100°C 100 Tj=75°C 1.E-02 Tj=50°C 1.E-03 Tj=25°C VR(V) VR(V) 10 1.E-04 10 20 30 40 50 60 70 80 90 100 Figure 9: Forward voltage drop versus forward current (per diode) IFM(A) 100 Tj=125°C (maximum values) Tj=125°C (typical values) Tj=25°C (maximum values) 10 VFM(V) 1 0.0 4/7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 STPS20S100C Figure 10: TO-220FPAB Package Mechanical Data REF. A B H Dia L6 L7 L2 L3 L5 D F1 L4 F2 F E G1 G A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.7 0.018 0.027 0.75 1 0.03 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9 9.3 0.354 0.366 3 3.2 0.118 0.126 Figure 11: I2PAK Package Mechanical Data REF. DIMENSIONS Millimeters A E A c2 L2 D L1 A1 b1 L b e c Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.70 0.044 0.067 b2 1.14 1.70 0.044 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 e1 5/7 STPS20S100C Figure 12: TO-220AB Package Mechanical Data REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 Table 6: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STPS20S100CT STPS20S100CT TO-220AB 2.20 g 50 Tube STPS20S100CFP STPS20S100CFP TO-220FPAB 2g 50 Tube STPS20S100CR STPS20S100CR I2PAK 1.49 g 50 Tube ■ ■ ■ ■ Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 7: Revision History 6/7 Date Revision 16-Mar-2005 1 Description of Changes First issue. STPS20S100C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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