STQ2NF06L N-CHANNEL 60V - 0.1 Ω - 2A TO-92 STripFET™ II POWER MOSFET TYPE STQ2NF06L ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V <0.12 Ω 2A TYPICAL RDS(on) = 0.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 16 V ID Drain Current (continuous) at TC = 25°C 2 A ID Drain Current (continuous) at TC = 100°C 1.2 A IDM(•) Drain Current (pulsed) 8 A Ptot(1) Total Dissipation at TC = 25°C 3 W Derating Factor 8 W/°C dv/dt (2) Peak Diode Recovery voltage slope 6 V/ns EAS (3) Single Pulse Avalanche Energy 200 mJ Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (1) Related to Rthj -l October 2003 . Value -55 to 150 °C °C (2) ISD ≤2A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX (3) Starting T j = 25 oC, ID = 2A, VDD = 30V 1/9 STQ2NF06L THERMAL DATA Rthj-lead Rthj-amb Tl Thermal Resistance Junction-Lead Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 40 125 260 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 250 µA Min. Typ. 1 ID = 1 A ID = 1 A V 0.1 0.12 0.12 0.14 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/9 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 1 A Min. 3 S 360 55 25 pF pF pF STQ2NF06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit Turn-on Time Rise Time ID = 1 A VDD = 30 V VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 3) 10 20 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 2 A VGS= 5 V 5.6 1.2 2.6 7.6 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 30 V ID = 1 A VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 3) 17 6 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 2 A Tj = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 28 31 2.2 Max. Unit 2 8 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance Junction-lead 3/9 STQ2NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STQ2NF06L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/9 STQ2NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STQ2NF06L TO-92 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 E 0.500 1.27 F 0.4 G 0.35 0.050 0.51 0.016 0.020 0.14 7/9 STQ2NF06L 8/9 STQ2NF06L Information furnished is believed to be accurate and reliable. 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