STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L ■ ■ ■ ■ VDSS RDS(on) ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ SOLENOID AND RELAY DRIVERS 1 D2 PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Unit 40 V 40 V Gate- source Voltage ± 16 V ID(*) Drain Current (continuos) at TC = 25°C 100 A ID Drain Current (continuos) at TC = 100°C 70 A VGS IDM(•) Ptot Drain Current (pulsed) 400 A Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3.6 V/ns E AS (2) Single Pulse Avalanche Energy 1.4 J -65 to 175 °C 175 °C Tstg Tj Storage Temperature Max. Operating Junction Temperature (•) Pulse width limit ed by safe operating area. (*) Current Limited by package February 2002 . Value (1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX (2) Starting Tj = 25 oC, IAR = 50A, V DD= 30V 1/9 STB100NF04L THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ °C/W °C/W °C 0.5 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C Gate-body Leakage Current (VDS = 0) VGS = ± 16 V Min. Typ. Max. 40 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V I D = 50 A ID = 50 A Min. Typ. 1 V 0.0036 0.0040 0.0042 0.0065 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/9 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 20 A Min. 50 S 6400 1300 190 pF pF pF STB100NF04L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 20 V ID = 50 A VGS = 4.5 V R G = 4.7 Ω (Resistive Load, Figure 3) 37 270 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 32V ID= 100A VGS= 4.5V 72 20 28.5 90 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 20 V D = 50 A VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 3) 90 80 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 32 V ID = 100 A VGS = 4.5 V RG = 4.7Ω, (Inductive Load, Figure 5) 85 125 160 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 100A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 100 A di/dt = 100A/µs T j = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. V GS = 0 88 240 5.5 Max. Unit 100 400 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB100NF04L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB100NF04L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature. . . 5/9 STB100NF04L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB100NF04L D2PAK MECHANICAL DATA DIM. MIN. mm. TYP. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.7 0.23 0.93 0.001 0.028 0.009 0.037 B2 C 1.14 0.45 1.7 0.6 0.045 0.018 0.067 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 E 10 10.4 0.394 E1 G 8.5 4.88 5.28 8 0.315 0.409 0.334 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 M 1.4 2.4 1.75 3.2 0.055 0.094 0.069 0.126 R V2 0° 8° 0° 0.4 0.016 8° 7/9 STB100NF04L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 8/9 inch MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB100NF04L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9