ETC STB100NF04LT4

STB100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK
STripFET II POWER MOSFET
TYPE
STB100NF04L
■
■
■
■
VDSS
RDS(on)
ID
40 V
<0.0042Ω
100 A
TYPICAL RDS(on) = 0.0036 Ω
LOW THRESHOLD DRIVE
100% AVALANCHE TESTED
LOGIC LEVEL DEVICE
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size ”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
1
D2 PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Unit
40
V
40
V
Gate- source Voltage
± 16
V
ID(*)
Drain Current (continuos) at TC = 25°C
100
A
ID
Drain Current (continuos) at TC = 100°C
70
A
VGS
IDM(•)
Ptot
Drain Current (pulsed)
400
A
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3.6
V/ns
E AS (2)
Single Pulse Avalanche Energy
1.4
J
-65 to 175
°C
175
°C
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limit ed by safe operating area.
(*) Current Limited by package
February 2002
.
Value
(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, IAR = 50A, V DD= 30V
1/9
STB100NF04L
THERMAL DATA
Rthj-case
Rthj-amb
Tj
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
°C/W
°C/W
°C
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
Min.
Typ.
Max.
40
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
I D = 250 µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
I D = 50 A
ID = 50 A
Min.
Typ.
1
V
0.0036
0.0040
0.0042
0.0065
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/9
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 20 A
Min.
50
S
6400
1300
190
pF
pF
pF
STB100NF04L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 20 V
ID = 50 A
VGS = 4.5 V
R G = 4.7 Ω
(Resistive Load, Figure 3)
37
270
Qg
Qgs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 32V ID= 100A VGS= 4.5V
72
20
28.5
90
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 20 V
D = 50 A
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
90
80
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 32 V
ID = 100 A
VGS = 4.5 V
RG = 4.7Ω,
(Inductive Load, Figure 5)
85
125
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 100A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 100 A
di/dt = 100A/µs
T j = 150°C
VDD = 20 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
V GS = 0
88
240
5.5
Max.
Unit
100
400
A
A
1.3
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
STB100NF04L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB100NF04L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature.
.
.
5/9
STB100NF04L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STB100NF04L
D2PAK MECHANICAL DATA
DIM.
MIN.
mm.
TYP.
MAX.
MIN.
inch.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
B
0.03
0.7
0.23
0.93
0.001
0.028
0.009
0.037
B2
C
1.14
0.45
1.7
0.6
0.045
0.018
0.067
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
E
10
10.4
0.394
E1
G
8.5
4.88
5.28
8
0.315
0.409
0.334
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
M
1.4
2.4
1.75
3.2
0.055
0.094
0.069
0.126
R
V2
0°
8°
0°
0.4
0.016
8°
7/9
STB100NF04L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
8/9
inch
MIN.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB100NF04L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics.
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 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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