STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE VDSS (@Tjmax) STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ ■ 550 550 550 550 550 V V V V V Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A 3 1 3 3 1 2 TO-220 1 D2PAK 2 TO-220FP 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters 3 12 3 I2PAK 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB21NM50N B21NM50N D2PAK TAPE & REEL STB21NM50N-1 B21NM50N I2PAK TUBE STF21NM50N F21NM50N TO-220FP TUBE STP21NM50N P21NM50N TO-220 TUBE STW21NM50N W21NM50N TO-247 TUBE Rev. 3 October 2005 1/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220 / D2PAK / I2PAK / TO-247 VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±25 V ID Drain Current (continuous) at TC = 25°C 18 18 (*) A ID Drain Current (continuous) at TC = 100°C 11 11 (*) A Drain Current (pulsed) 72 72 (*) A Total Dissipation at TC = 25°C 140 30 W Derating Factor 1.12 0.23 W/°C IDM ( ) PTOT dv/dt(1) Peak Diode Recovery voltage slope Viso Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj 15 -- V/ns 2500 –55 to 150 150 Max. Operating Junction Temperature V °C ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed (1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 4: Thermal Data TO-220 / D²PAK / I²PAK / TO-247 TO-220FP 0.89 4.21 Rthj-case Thermal Resistance Junction-case Max °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Table 5: Avalanche Characteristics Symbol 2/16 Parameter IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 9 A 480 mJ STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Test Conditions Value Min. V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 dv/dt(2) Drain Source Voltage Slope Vdd=400V, Id=25A, Vgs=10V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 9 A Typ. Unit Max. 500 V 44 2 V/ns 1 10 µA µA 100 nA 3 4 V 0.150 0.190 Ω Typ. Max. (2) Characteristic value at turn off on inductive load Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 9 A VDS = 25V, f = 1 MHz, VGS = 0 Unit 12 S 1950 420 60 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 270 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time VDD =250 V, ID = 9 A RG = 4.7Ω VGS = 10 V (see Figure 18) 22 18 90 30 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 18 A, VGS = 10V, (see Figure 21) 65 10 30 nC nC nC Rg Gate Input Resistance f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (1) trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 18 72 A A 1.5 V Forward On Voltage ISD = 18 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 19) 360 5 27 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 19) 640 6.5 27 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220 Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 9: Transconductance Figure 12: Static Drain-source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 15: Source-Drain Forward Characteristics 6/16 Figure 16: Normalized BVdss vs Temperature STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 17: Unclamped Inductive Load Test Circuit Figure 20: Unclamped Inductive Wafeform Figure 18: Switching Times Test Circuit For Resistive Load Figure 21: Gate Charge Test Circuit Figure 19: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.40 MIN. TYP 4.60 0.173 TYP. 0.181 MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/16 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 14/16 TYP 5.50 0.216 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 9: Revision History Date Revision 07-Sep-2005 28-Sep-2005 14-Oct-2005 1 2 3 Description of Changes First Release. Symbol changed in Table 5 Modified curves 5,8 15/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16