STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features Figure 1: Package Type VDSS RDS(on) ID Pw STB200NF04 STB200NF04-1 STP200NF04 40 V 40 V 40 V < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω 120 A 120 A 120 A 310 W 310 W 310 W ■ ■ 3 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 1 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 3 2 D2PAK TO-220 12 3 I2PAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ AUTOMOTIVE Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB200NF04T4 B200NF04 D2PAK TAPE & REEL STB200NF04-1 B200NF04 I2PAK TUBE STP200NF04 P200NF04 TO-220 TUBE Rev. 3 October 2004 1/15 STP200NF04 - STB200NF04 - STB200NF04-1 Table 3: Absolute Maximum ratings Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 40 V Drain-gate Voltage (RGS = 20 kΩ) 40 V VGS Gate- source Voltage ± 20 V ID (#) Drain Current (continuos) at TC = 25°C 120 A ID (#) Drain Current (continuos) at TC = 100°C 120 A IDM () Drain Current (pulsed) 480 A PTOT Total Dissipation at TC = 25°C 310 W Derating Factor 2.07 W/°C dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns EAS (2) Single Pulse Avalanche Energy 1.3 J Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C () Pulse width limited by safe operating area (1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package Table 4: Thermal Data TO-220 / I2PAK / D2PAK Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 17) °C/W Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS 2/15 Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 90 A Min. Typ. Max. 40 Unit V 2 3.3 1 10 µA µA ±100 nA 4 V 3.7 mΩ STP200NF04 - STB200NF04 - STB200NF04-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 90 A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 150 S 5100 1600 600 pF pF pF Table 7: Switching On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 20 V, ID = 90 A RG = 4.7Ω VGS = 10 V (see Figure 20) 30 320 140 120 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 20V, ID = 120 A, VGS = 10V (see Figure 23) 170 30 62 210 nC nC nC Typ. Max. Unit 120 480 A A 1.3 V ns ns ns ns Table 8: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 120 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 21) trr Qrr IRRM Test Conditions Min. 85 190 4.5 ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/15 STP200NF04 - STB200NF04 - STB200NF04-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/15 STP200NF04 - STB200NF04 - STB200NF04-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/15 STP200NF04 - STB200NF04 - STB200NF04-1 Figure 15: Thermal Resistance Rthj-a vs PCB Copper Area 6/15 Figure 16: Max Power Dissipation vs PCB Copper Area STP200NF04 - STB200NF04 - STB200NF04-1 Figure 17: Allowable lav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 °C, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV. 7/15 STP200NF04 - STB200NF04 - STB200NF04-1 SPICE THERMAL MODEL Table 9: 6th Order RC Network Parameter Node Value CTHERM1 1-2 1.4958E-3 CTHERM2 2-3 3.5074E-2 CTHERM3 3-4 5.939E-2 CTHERM4 4-5 9.7411E-2 CTHERM5 5-6 8.8596E-2 CTHERM6 6-7 8.2755E-1 RTHERM1 1-2 0.0384 RTHERM2 2-3 0.0624 RTHERM3 3-4 0.072 RTHERM4 4-5 0.0912 RTHERM5 5-6 0.1008 RTHERM6 6-7 0.1152 Figure 18: Schematic of 6th Order RC Network 8/15 STP200NF04 - STB200NF04 - STB200NF04-1 Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform Figure 20: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times 9/15 STP200NF04 - STB200NF04 - STB200NF04-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/15 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP200NF04 - STB200NF04 - STB200NF04-1 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 11/15 STP200NF04 - STB200NF04 - STB200NF04-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 12/15 MAX. MIN. A 4.40 TYP 4.60 0.173 TYP. 0.181 MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP200NF04 - STB200NF04 - STB200NF04-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 B 1.5 C 12.8 D 20.2 G 24.4 N 100 D 1.5 1.6 0.059 0.063 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 50 T 0.25 0.35 W 23.7 24.3 MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D1 R MIN. 330 T TAPE MECHANICAL DATA inch MAX. 1.574 0.0098 0.0137 0.933 0.956 * on sales type 13/15 STP200NF04 - STB200NF04 - STB200NF04-1 Table 10: Revision History Date Revision 28-Sep-2004 11-Oct-2004 2 3 14/15 Description of Changes New Stylesheet. No Content Change Final datasheet STP200NF04 - STB200NF04 - STB200NF04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 15/15