STMICROELECTRONICS TDA2008V

TDA2008
12W AUDIO AMPLIFIER (Vs = 22V, RL = 4Ω)
DESCRIPTION
The TDA2008 is a mololithic class B audio power
amplifier in Pentawatt package designed for driving low impedence loads (down to 3.2Ω). The divice
provides a high output current capability(up to 3A),
very low harmonic and crossover distortion.
In addition,the device offers the following features:
– very low number of external components;
– assembly ease, due to Pentawatt power
package with no electrical insulations requirements;
– space and cost saving;
– high reliability;
– flexibility in use;
– thermal protection.
Pentawatt
ORDERING NUMBER : TDA 2008V
TYPICAL APPLICATION CIRCUIT
March 1993
1/9
TDA2008
PIN CONNECTION (top view)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Vs
DC supply voltage
28
V
Io
Output peak current (repetitive)
3
A
Io
Output peak current ( non repetitive)
4
A
Ptot
Power dissipation at Tcase = 90°C
20
W
Tstg, Tj
Storage and junction temperature
- 40 to 150
°C
SCHEMATIC DIAGRAM
2/9
TDA2008
DC TEST CIRCUIT
AC TEST CIRCUIT
3/9
TDA2008
THERMAL DATA
Symbol
Rth-j-case
Parameter
Thermal resistance junction-case
max
Value
Unit
3
°C/W
ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Vs = 18V, Tamb = 25 °C unless otherwise
specified)
Symbol
Vs
Supply voltage
Vo
Quiescent output voltage
(pin 4)
Id
Quiescent drain current
(pin 5)
Po
Output power
Vi(RMS)
Vi
Test conditions
65
d = 10%
RL = 8Ω
f = 1 KHz
RL = 4Ω
f = 1 KHz
Po = 0.5W
Po = 8W
Po = 0.5W
Po = 12W
Po = 1W
RL = 4Ω
d
Distortion
f = 1 KHz
Po = 0.05 to 4W
Po = 0.05 to 6W
Input resistance (pin 1)
Gv
Voltage gain (open loop)
Gv
Voltage gain (closed loop)
eN
Input noise voltage
iN
Input noise current
Supply voltage rejection
Max.
Unit
28
V
10
V
115
RL
RL
RL
RL
= 8Ω
= 8Ω
= 4Ω
= 4Ω
RL = 8Ω
RL = 4Ω
f = 1 KHz
W
12
W
f = 1 KHz
RL = 8Ω
39.5
BW = 22Hz to 22 KHz
Vripple = 0.5
Rg = 10KΩ
RL = 4Ω
f = 100 Hz
mV
20
80
14
70
mV
mV
mV
mV
40 to 15,000
Hz
0.12
0.12
70
30
mA
8
300
Frequency response
(-3 dB)
Ri
Typ.
10.5
Input saturation voltage
Input sensitivity
Min.
10
B
SVR
4/9
Parameter
1
1
%
%
150
KΩ
80
dB
40
40.5
dB
1
5
µV
60
200
pA
36
dB
TDA2008
APPLICATION INFORMATION
Figure 1. Typical application circuit
Figure 2. P.C. board and component layout for
the circuit of fig. 1 (1:1 scale)
Figure 3. 25W bridge configuration applica- tion Figure 4. P.C. board and component layout for the
circuit (°)
circuit of fig. 3 (1:1 scale)
(°) The value of the capacitorr C3 and C4 are different to optimize
the SVR (Typ. = 40 dB)
5/9
TDA2008
Figure 5. Quiescent current
vs. supply voltage
Figure 6. Output voltage vs.
supply voltage
Figure 7. Output power vs.
supply voltage
Fi gur e 8 . Di stor ti on vs.
frequency
Figure 9. Supply voltage
rejection vs. frequency
Figure 10. Maximum al- lowable
power dissipation vs. ambient
temperature
6/9
TDA2008
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig. 2 is recommended. If
different layouts are used, the ground points of input
1 and input 2 must be well decoupled from the
ground of the output through which a rather high
current flows.
Assembly suggestion
No electrical insulation is needed between the
package and the heat-sink. Pin length should be as
short as possible. The soldering temperature must
not exceed 260°C for 12 seconds.
Application suggestions
The recommended component values are those
shown in the application circuits of Fig. 1. Different
values can be used. The following table is intended
to aid the car-radio designer.
Component
Recommended
value
C1
2.2µF
Input DC decoupling
Noise at switch-on,
switch-off
C2
470µF
Ripple rejection.
Degradation of SVR.
C3
0.1µF
Supply by passing.
Danger of oscillation.
C4
1000µF
Output coupling.
Higher low frequency
cutoff.
C5
0.1µF
Frequency stability.
Danger of oscillation
at high frequencies
with inductive loads.
R1
(Gv - 1) • R2
Setting of gain. (*)
Increase of drain
current.
R2
2.2Ω
Setting of gain and
SVR.
Degradation of SVR.
R3
1Ω
Frequency stability.
Danger of oscillation
at high frequencies
with inductive loads.
Purpose
Larger than
recommended value
Smaller than
recommended value
(*) The closed loop gain must be higher than 26dB.
7/9
TDA2008
PENTAWATT PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
A
MIN.
TYP.
4.8
C
1.37
D
0.054
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.8
1.05
0.031
0.041
F1
1
1.4
0.039
0.055
G
3.4
0.126
0.134
0.142
G1
6.8
0.260
0.268
0.276
H2
H3
10.4
10.05
0.409
10.4
0.396
0.409
L
17.85
0.703
L1
15.75
0.620
L2
21.4
0.843
L3
22.5
0.886
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
M
0.260
4.5
M1
0.177
4
Dia
0.157
3.65
3.85
0.144
0.152
E
L
D1
C
D
M
A
M1
L1
L2
G
L7
L6
F
H2
F1
Dia.
G1
L3
H3
L5
8/9
MAX.
0.189
TDA2008
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
9/9