STMICROELECTRONICS TDA8179F

TDA8179FS
TV VERTICAL DEFLECTION BOOSTER
..
.
POWER AMPLIFIER
FLYBACK SUPPLY VOLTAGE SEPARATED
THERMAL PROTECTION
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8179FS vertical deflection booster is able
to work with a flyback voltage more than the double
of VS.
The TDA8179FS operates with supplies up to 42V,
flyback output up to 92V and provides up to 2App
output current to drive to yoke.
The TDA8179FS is offered in HEPTAWATT package.
HEPTAWATT
(Plastic Package)
ORDER CODE : TDA8179FS
PIN CONNECTIONS
7
6
5
4
3
2
1
Non-inverting Input
Output Stage Supply
Output
GND
Flyback Supply Voltage
Supply Voltage
Inverting Input
8179F-01.EPS
Tab connected to pin 4
May 1993
1/6
TDA8179FS
BLOCK DIAGRAM
+ VS
+ V FLYBACK
2
6
3
1
POWER
AMPLIFIER
5
7
YOKE
THERMAL
PROTECTION
8179F-02.EPS
4
APPLICATION CIRCUIT
+ VS
+ VF
2
IN
VREF
1
6
TDA8179FS
3
5
OUT
7
YOKE
8179F-03.EPS
4
Note : For values see ” Easy Design of Vertical Deflection Stages” (software available from our sales offices)
2/6
TDA8179FS
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
VS
Supply Voltage (pin 2)
50
V
VF
Flyback Supply Voltage
100
V
VF - VS
Difference between Flyback Supply Voltage and Supply Voltage
50
V
V1 , V7
Amplifier Input Voltage
+ VS
Output Peak Current
A
Non-repetitive, t = 2ms
f = 50 or 60Hz, t ≤ 10µs
f = 50 or 60Hz, t > 10µs
I3
2
2
1.8
Pin 3 Peak Flyback Current at f = 50 or 60Hz, tfly ≤ 1.5ms
o
1.8
A
20
W
Ptot
Total Power Dissipation at TC = 70 C
Tstg
Storage Temperature
- 40, + 150
o
C
Tj
Junction Temperature
0, +150
o
C
8179F-01.TBL
IO
THERMAL DATA
Symbol
Rth (j-c)
Parameter
Value
Junction-case Thermal Resistance
Max.
Unit
o
3
C/W
8179F-02.TBL
Symbol
ELECTRICAL CHARACTERISTICS
(V7 = 2.2V, VS = 42V, TA = 25oC, unless otherwise specified)
(refer to the test circuits - see Figure 1 next page)
Parameter
Test Conditions
Min.
Typ.
10
Max.
Unit
VS
Operating Supply Voltage Range
42
V
I2
Pin 2 Quiescent Current
I3 = 0
I5 = 0
10
20
mA
I6
Pin 6 Quiescent Current
I3 = 0
I5 = 0
20
40
mA
I1
Amplifier Bias Current
V1 = 1V
- 0.2
-1
µA
V5
Quiescent Output Voltage
24.2
17.8
25
18.5
V
VS = 42V
VS = 35V
R a = 3.9kΩ
R a = 5.6kΩ
23.4
17
V5L
Output Saturation Voltage to GND
I5 = 1A
1.2
1.5
V
V5H
Output Saturation Voltage to Supply
- I5 = 1A
2.2
2.6
V
VD5 - 6
Diode Forward Voltage between Pins 5-6
ID = 1A
1.5
3
V
VD3 - 6
Diode Forward Voltage between Pins 3-6
ID = 1A
1.5
3
V
R1
Input Resistance
200
kΩ
Tj
Junction Temperature for Thermal
Shutdown
140
o
8179F-03.TBL
Symbol
C
3/6
TDA8179FS
FIGURE 1 : DC Test Circuits
Figure 1a : Measurement of I1, I2, I6
Figure 1b : Measurement of V5H
+ VS
I2
+ VS
I6
2
V5H
6
2
6
5
10k Ω
TDA8179FS
TDA8179FS
1
S1
5
a
1
b
7
4
7
I1
-I5
4
V7
V
1V
7
S1 : (a) I2 and I6, (b) I1
Figure 1c : Measurement of V5L
8179F-05.EPS
8179F-04.EPS
1V
Figure 1d : Measurement of V5
+ VS
+ VS
I5
2
2
6
6
3
TDA8179FS
1
5
TDA8179FS
1
5
7
4
V5
7
V7
4
39k Ω
V5L
V7
4/6
8179F-07.EPS
Re
8179F-06.EPS
3V
TDA8179FS
Figure 2 : SOA of Each Output Power Transistor at TA = 25oC
10
I C (A)
Pulse Operation*
I C max. pulsed
2
1.2
1
I C max. continued
1ms
10ms
DC
Operation
-1
10
VCE (V)
8179F-08.EPS
* For single non repetitive pulse
-2
10
1
10
2
10
5/6
TDA8179FS
PACKAGE MECHANICAL DATA : HEPTAWATT
E
L
D1
C
D
M
A
M1
L1
L2
G2
H3
G1
L3
G
L5
F
PM-HEPTV.EPS
L7
H2
F1
Dia.
L6
Min.
A
C
D
D1
E
F
F1
G
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia.
Millimeters
Typ.
2.4
1.2
0.35
0.6
2.41
4.91
7.49
2.54
5.08
7.62
10.05
Max.
4.8
1.37
2.8
1.35
0.55
08
0.9
2.67
5.21
7.8
10.4
10.4
Min.
0.094
0.047
0.014
0.024
0.095
0.193
0.295
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
0.668
0.587
0.848
0.891
3
15.8
6.6
0.102
0.594
0.236
2.8
5.08
3.65
0.100
0.200
0.300
0.396
16.97
14.92
21.54
22.62
2.6
15.1
6
Inches
Typ.
0.118
0.622
0.260
0.110
0.200
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
2
Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
HEPTV.TBL
Dimensions