STMICROELECTRONICS TH562

SD1731 (TH562)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
..
..
..
.
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
EFFICIENCY 40%
COMMON EMITTER
GOLD METALLIZATION
POUT = 220 W PEP WITH 13 dB GAIN
.500 4LFL (M174)
epoxy sealed
ORDER CO DE
SD1731
BRANDING
TH562
PIN CONNECTION
DESCRIPTION
The SD1731 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
1. Collector
3. Base
2. Emitter
4. Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Valu e
Un it
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
Device Current
20
A
Power Dissipation (Theatsink ≤ 25°C)
233
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
IC
PDISS
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.55
°C/W
RTH(c-s)
Case-Heatsink Thermal Resistance
0.2
°C/W
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SD1731 (TH562)
ELECTRICAL SPECIFICATIONS
STATIC (Tcase = 25°C)
Symbo l
Value
T est Co nditions
Min .
T yp.
Max.
Unit
BVCBO
IC = 200 mA
IE = 0 mA
110
—
—
V
BVCEO
IC = 200 mA
IB = 0 mA
55
—
—
V
BVEBO
IE = 20 mA
IC = 0 mA
4.0
—
—
V
ICEO
VCE = 30 V
IE = 0 mA
—
—
5
mA
ICES
VCE = 55 V
IE = 0 mA
—
—
10
mA
hFE
VCE = 6 V
IC = 10 A
15
—
80
—
DYNAMIC (Theatsink = 25°C)
Symbo l
Valu e
Test Cond ition s
Min.
T yp.
Max.
Un it
POUT
f = 30 MHz
VCE = 50 V
ICQ = 150 mA
220
—
—
W
GP *
POUT = 220 W PEP
VCE = 50 V
ICQ = 150 mA
13
—
—
dB
IMD*
POUT = 220 W PEP
VCE = 50 V
ICQ = 150 mA
—
—
−30
dBc
ηc*
POUT = 220 W PEP
VCE = 50 V
ICQ = 150 mA
40
—
—
%
COB
f = 1 MHz
VCB = 50 V
—
330
—
pf
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SD1731 (TH562)
TYPICAL PERFORMANCE
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER
OUTPUT PEP
INTERMODULATION DISTORTION
vs POWER OUTPUT PEP
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SD1731 (TH562)
TYPICAL PERFORMANCE
POWER GAIN vs POWER OUTPUT PEP
COLLECTOR BASE CAPACITANCE vs COLLECTOR
EMITTER VOLTAGE
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SD1731 (TH562)
TEST CIRCUIT
C1
C2
C3
: Arco 426 + 220pF + 330pF Chips
: 2 x 10nF Chips
: Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF +
560pf Chps
C4
: Arco 4213 + 330pF Chip
C5
: 10nF Chip
C6
: 3 x 10nF Chips
C7, C8, C9,
C10, C11 : 1nF + 10nF + 100nF + 4.7µF, 63V + 100µF, 63V
L1
L2, L3
L4
L5
T1
T2
T3
: 3 Turns of 1.2mm Unenameled Wire Diameter,
7.1mm, Length 13mm
: 8 Turns of 0.55mm Enameled Wire on Ferrite Core T4
Phillips 4C6 97170 (9 x 6 x 3)
July 10, 1995
: 10 Turns of 1.2mm Enameled Wire, Diameter
8.1mm, Length 20mm
: 7 Turns of 1.2mm Enameled Wire on Ferrite Core
Phillips 4C6 97180
: 6:3.5 Impedance Transformer on toriod Phillips
4C6 97180
: Twisted Pair 4:1 Transformer, 4 Turns Made with
1.0mm Enameled on toriod Phillips 4C6 97180
: Feedback Transformer
Primary: 2 Turns of 1mm Enameled Wire
Secondary: 8 Turns of 1mm Enameled Wire
: Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted
1.2mm Wires on Ferrite Core Phillips 4C6 97200
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SD1731 (TH562)
MOUNTING CIRCUIT
BIAS CIRCUIT
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SD1731 (TH562)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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