SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS .. .. .. . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL (M111) epoxy sealed ORDER CODE SD1480 BRANDING SD1480 PIN CONNECTION DESCRIPTION The SD1480 is a common emitter 28 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications applications. This internally matched device incorporates diffused emitter ballasting resistors nad provides high gain and stable operation across the entire 136 - 175 MHz VHF communications band. 1. Collector 2. Base 3. Emitter 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 36 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V Device Current 20 A Power Dissipation 270 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.65 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance June 20, 1994 1/6 SD1480 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO I C = 100 mA IE = 0 mA 65 — — V BVCES I C = 100 mA VBE = 0 V 65 — — V BVCEO I C = 100 mA IB = 0 mA 35 — — V BVEBO I E = 10 mA IC = 0 mA 4.0 — — V ICES VCE = 30 V IE = 0 mA — — 15 mA hFE VCE = 5 V IC = 5 A 20 — 200 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 150 MHz PIN = 15 W VCE = 28 V 125 — — W PG ηc f = 150 MHz POUT = 125 W VCE = 28 V 9.2 — — dB f = 150 MHz POUT = 125 W VCE = 28 V 55 — — % COB f = 1 MHz VCB = 28 V — — 250 pF 20:1 — — VSWR Load f = 150 MHz Mismatch PIN = 15 W VCE = 28 V TYPICAL PERFORMANCE OUTPUT CAPACITANCE vs COLLECTOR BASE VOLTAGE 2/6 INPUT CAPACITANCE vs EMITTER BASE VOLTAGE SD1480 TYPICAL PERFORMANCE (cont’d) POWER OUTPUT vs POWER INPUT INPUT VSWR vs FREQUENCY POWER OUTPUT vs COLLECTOR EMITTER VOLTAGE POWER GAIN & COLLECTOR EFFICIENCY vs FREQUENCY 3/6 SD1480 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE 4/6 TYPICAL COLLECTOR LOAD IMPEDANCE SD1480 TEST CIRCUIT C1 C2 C3 C4, C5 C6 C7 C8 C9 C10 C11 C12 C13, C15 C14 C16 : : : : : : : : : : : : : : .080pF Arco 462 25mF Underwood 2.020pF Arco 402 15pF Underwood 240pF ATC Chip Capacitor 270pF ATC Chip Capacitor 150pF Underwood 180pF Underwood 100pF Underwood 8.20pF Johanson JMC5501 33pF Underwood .15µF Disc Capacitor 100pF Underwood 10 µF Electrolytic L1 L2 L3 L4 : See Detail A : Ferroxcube VK200 19/4B : 1 Turn #16 AWG 250 I.D. Close Wound : 5 Turns #16 AWG 250 I.D. Close Wound Z1 Z2 Z3 Z4 : : : : PCB: 3M 1oz. Doulbe Sided 1/16” Teflon-Glass, Er = 2.5 Microstrip, .330” Microstrip, .200” Microstrip, .200” Microstrip, .200” W x 1.600” L W x .400” L W x .600” L W x 1.600” L 5/6 SD1480 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0111 rev. D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6