TMBAT 49 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. MELF (Glass) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Ti = 70 °C IFRM Repetitive Peak Forward Current tp = 1s δ ≤ 0.5 IFSM Surge non Repetitive Forward Current tp = 10ms Tstg Tj Storage and Junction Temperature Range TL Maximum Temperature for Soldering during 15s IF Value Unit 80 V 500 mA 3 A 10 A - 65 to + 150 - 65 to + 125 °C °C 260 °C THERMAL RESISTANCE Symbol Rth(j-l) Test Conditions Junction-leads Value Unit 110 °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Max. Unit IR * Tj = 25°C VR = 80V Test Conditions Min. Typ. 200 µA VF * Tj = 25°C IF = 10mA 0.32 V Tj = 25°C IF = 100mA 0.42 Tj = 25°C IF = 1A 1 DYNAMIC CHARACTERISTICS Symbol C Test Conditions Tj = 25°C f = 1MHz Min. Typ. VR = 0V 120 VR = 5V 35 Max. Unit pF * Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed 1A 1/4 TMBAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 2/3 TMBAT 49 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. Figure 7. - Surge non repetitive forward current versus number of cycles. 3/4 TMBAT 49 PACKAGE MECHANICAL DATA MELF Glass DIMENSIONS A REF. Millimeters Min. / B O O /D C Typ. Inches Max. Min. Typ. Max. A 4.80 5.20 0.189 0.205 ∅B 2.50 2.65 0.098 0.104 C 0.45 0.60 0.018 0.024 ∅D 2.50 0.098 C FOOT PRINT DIMENSIONS (Millimeter) 3 4 6.5 Marking: ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4