STMICROELECTRONICS BAT47

BAT 47
BAT 48

SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessivevoltage such as electrostaticdischarges.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Ta = 25 °C
IFRM
Repetitive Peak Fordward Current*
tp ≤ 1s
δ ≤ 0.5
IFSM
Surge non Repetitive Forward Current*
IF
BAT47
BAT48
Unit
20
40
V
350
mA
1
A
tp = 10ms
7.5
A
tp = 1s
1.5
Ta = 25 °C
330
mW
- 65 to + 150
- 65 to + 125
°C
°C
230
°C
Value
Unit
300
°C/W
Ptot
Power Dissipation*
Tstg
Tj
Storage and Junction Temperature Range
TL
Maximum Temperature for Soldering during 10s at 4mm from
Case
THERMAL RESISTANCE
Symbol
R th(j-l)
Test Conditions
Junction-ambient*
* On infinite heatsink with 4mm lead length
August 1999 Ed: 1A
1/5
BAT 47/BAT 48
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V(BR)
V F*
Test Conditions
IR = 10µA
20
IR = 25µA
BAT48
40
Tj = 25°C IF = 0.1mA
All Types
Typ.
Max.
0.25
0.3
Tj = 25°C IF = 10mA
0.4
BAT47
0.8
Tj = 25°C IF = 300mA
1
BAT48
0.5
Tj = 25°C IF = 200mA
0.75
Tj = 25°C IF = 500mA
0.9
Tj = 25°C
VR = 1.5V
V
0.5
Tj = 25°C IF = 150mA
Tj = 25°C IF = 50mA
Unit
V
Tj = 25°C IF = 1mA
Tj = 25°C IF = 30mA
IR*
Min.
BAT47
All Types
1
Tj = 60°C
µA
10
VR = 10V
Tj = 25°C
BAT47
4
20
Tj = 60°C
VR = 20V
Tj = 25°C
10
30
Tj = 60°C
VR = 10V
Tj = 25°C
BAT48
2
15
Tj = 60°C
VR = 20V
Tj = 25°C
5
25
Tj = 60°C
VR = 40V
Tj = 25°C
25
50
Tj = 60°C
DYNAMIC CHARACTERISTICS
Symbol
C
Test Conditions
Tj = 25°C VR = 0V
Min.
f = 1MHz
20
Tj = 25°C
* Pulse test: tp ≤ 300µs δ < 2%.
2/5
IF = 10mA
Max.
Unit
pF
12
Tj = 25°C VR = 1V
trr
Typ.
VR = 1V
irr = 1mA
RL = 100Ω
10
ns
BAT 47/BAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
3/5
BAT 47/BAT 48
Figure 5. Capacitance C versus reverse
4/5
BAT 47/BAT 48
PACKAGE MECHANICAL DATA
DO 35 Glass
DIMENSIONS
B
A
note 1 E
B
/C
O
REF.
O
/D
note 2
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
B
1.53
2.00
0.060
0.079
C
12.7
D
0.458
E note 1
O
/D
Millimeters
0.500
0.558
0.018
0.022
Cooling method: by convection and conduction.
Marking: clear, ring at cathode end.
Weight: 0.015g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorizedfor use as critical components in life support devices or systems withoutexpress written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5