STMICROELECTRONICS TPDV825

TPDV 625 ---> 1225
ALTERNISTORS
..
.
FEATURES
HIGH COMMUTATION : > 88 A/ms (400Hz)
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB81734)
HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
DESCRIPTION
A1
A2
The TPDV 625 ---> 1225 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
G
TOP 3
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM
VRRM
March 1995
Parameter
Value
Unit
RMS on-state current
(360° conduction angle)
Tc = 85 °C
25
A
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
390
A
tp = 8.3 ms
250
tp = 10 ms
230
I2t value
tp = 10 ms
265
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20
A/µs
Non
Repetitive
100
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
260
°C
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
Repetitive peak off-state voltage
Tj = 125 °C
TPDV
Unit
625
825
1025
1225
600
800
1000
1200
V
1/5
TPDV 625 ---> 1225
THERMAL RESISTANCES
Symbol
Value
Unit
50
°C/W
Rth (j-c) DC Junction to case for DC
1.5
°C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
1.1
°C/W
Rth (j-a)
Parameter
Contact to ambient
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W
PGM = 40W (tp = 20 µs)
IGM = 8A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Unit
IGT
VD=12V
(DC) RL=33Ω
Tj=25°C
I-II-III
MAX
150
mA
VGT
VD=12V
(DC) RL=33Ω
Tj=25°C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj=125°C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
Tj=25°C
I-II-III
TYP
2.5
µs
IL
IG=1.2 IGT
Tj=25°C
I-III
TYP
100
mA
II
200
IH *
IT= 500mA gate open
Tj=25°C
TYP
50
mA
VTM *
ITM = 35A tp= 380µs
Tj=25°C
MAX
1.8
V
IDRM
IRRM
VDRM
VRRM
Tj=25°C
MAX
0.02
mA
Tj=125°C
MAX
8
Linear slope up to VD=67%VDRM
gate open
Tj=125°C
MIN
500
V/µs
(dV/dt)c = 200V/µs
Tj=125°C
MIN
20
A/ms
dV/dt *
(dI/dt)c *
Rated
Rated
(dV/dt)c = 10V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
Value
88
TPDV 625 ---> 1225
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1.00
Zth( j-c)
0.10
Zt h( j-a)
0.01
tp (s)
1E-3
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
1E-2
1E-1
1E +0
1 E+1
1 E+2
1 E+3
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
3/5
TPDV 625 ---> 1225
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : Safe operating area.
4/5
Fig.8 : On-state characteristics (maximum values).
TPDV 625 ---> 1225
PACKAGE MECHANICAL DATA
TOP 3 Plastic
REF.
A
H
I
R 4.6
J
G
B
D
P
L
N
N
M
DIMENSIONS
Millimeters
C
Inches
Min.
Max.
Min.
Max.
A
15.10
15.50
0.594
0.611
B
20.70
21.10
0.814
0.831
C
14.30
15.60
0.561
0.615
0.650
D
16.10
16.50
0.632
G
3.40
-
0.133
-
H
4.40
4.60
0.173
0.182
I
4.08
4.17
0.161
0.164
J
1.45
1.55
0.057
0.062
L
0.50
0.70
0.019
0.028
M
2.70
2.90
0.106
0.115
N
5.40
5.65
0.212
0.223
P
1.20
1.40
0.047
0.056
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torqur value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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