KST2907 KST2907 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Value -60 Units V Collector-Emitter Voltage -40 V Emitter-Base Voltage -5 V Collector Current -600 mA PC Collector Dissipation 350 mW TSTG Storage Temperature 150 °C Symbol VCBO Collector-Base Voltage Parameter VCEO VEBO IC Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -10µA, IE=0 Min. -60 BVCEO BVEBO * Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -40 Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 ICEX Collector Cut-off Current VCE= -30V, VEB= -0.5V ICBO Collector Cut-off Current VCB= -50V, IE=0 hFE DC Current Gain VCE= -10V, IC= -0.1mA VCE= -10V, IC= -1.0mA VCE= -10V, IC= -10mA *VCE= -10V, IC= -150mA *VCE= -10V, IC= -500mA 35 50 75 100 30 Max. Units V V V -50 nA -0.02 µA 300 VCE (sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -0.4 -1.6 V V VBE (sat) * Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -1.3 -2.6 V V fT Current Gain Bandwidth Product IC= -50mA, VCE= -20V f=100MHz Cob Output Capacitance VCB= -10V, IE=0, f=1.0MHz 8.0 pF tON Turn On Time VCC= -30V, IC= -150mA IB1= -15mA 45 ns tOFF Turn Off Time VCC= -6V, IC= -150mA IB1=IB2= -15mA 100 ns 200 MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking 2B ©2000 Fairchild Semiconductor International Rev. A, February 2000 KST2907 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 10V 100 10 -1 -10 -100 -10 IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1000 -1 IC[A], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 12 8 6 4 2 0 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance ©2000 Fairchild Semiconductor International fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 10 Cob [pF], CAPACITANCE -10 VCE = -20V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A, February 2000 KST2907 Package Demensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E