KSP2222 KSP2222 General Purpose Transistor • Collector-Emitter Voltage: VCEO= 30V • Collector Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 IC V Collector Current 600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 60 BVCEO Collector Emitter Breakdown Voltage IC=10mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=50V, IE=0 hFE DC Current Gain VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, *IC=150mA VCE=10V, *IC=500mA Typ. Max. V V 10 35 50 75 100 30 Units V nA 300 VCE (sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.4 1.6 V V VBE (sat) * Base Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 1.3 2.6 V V Cob Output Capacitance VCB=10V, IE=0, f=1MHz fT Current Gain Bandwidth Product VCE=20V, IC=20mA f=100MHz tON Turn On Time VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA 35 ns tOFF Turn Off Time VCC=30V, IC=150mA IB1=IB2=15mA 285 ns 8 250 pF MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSP2222 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE Typical Characteristics 1k hFE, DC CURRENT GAIN VCE = 10V 100 10 1 10 100 1000 10 IC = 10 IB V BE(sat) 1 V CE(sat) 0.1 0.01 1 IC [mA], COLLECTOR CURRENT 10 1 0.1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT IE = 0 f = 1MHz Cob [pF], CAPACITANCE 1000 Figure 2. Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 ©2000 Fairchild Semiconductor International 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 1 10 1000 VCE = 20V 100 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A, February 2000 KSP2222 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E