TYP 212 --->TYP 2012 SCR FOR OVERVOLTAGE PROTECTION .. . FEATURES HIGH SURGE CURRENT CAPABILITY HIGH dI/dt RATING HIGH STABILITY AND RELIABILITY DESCRIPTION The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. K AG TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle, single phase circuit) Tc = 110 °C 12 A IT(AV) Average on-state current (180° conduction angle, single phase circuit) Tc = 110 °C 8 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 315 A tp = 10 ms 300 I2 t value tp = 10 ms 450 A2s ITM Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form tp = 1 ms 750 A dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs 100 A/µs Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C I2t Tl Symbol VDRM VRRM April 1995 Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C TYP Unit 212 512 1012 2012 25 50 100 200 V 1/5 TYP 212 ---> TYP 2012 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient Rth (j-c) DC Junction to case for DC Value Unit 60 °C/W 1.3 °C/W Value Unit GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VD=12V (DC) RL=33Ω Tj=25°C MAX 30 mA VGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V tgt VD=VDRM IG = 200mA dIG/dt = 1.5A/µs Tj=25°C TYP 1 µs IL IG= 1.2 IGT Tj=25°C TYP 60 mA IH IT= 500mA Tj=25°C MAX 50 mA gate open VTM ITM= 50A tp= 380µs Tj=25°C MAX 1.5 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA dV/dt Linear slope up to VD=67%VDRM gate open Tj= 125°C MIN 200 V/µs VD=67%VDRM ITM = 50A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs Tj= 125°C TYP 100 µs tq 2/5 Test Conditions Rated Rated Tj= 125°C 2 TYP 212 ---> TYP 2012 Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact. Fig.3 : Average temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. on-state current versus case Zth/Rth 1 Zt h( j-c) 0.1 Zt h( j-a) tp (s) 0.01 1E-3 Fig.5 : Relative variation of gate trigger current versus junction temperature. 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 3/5 TYP 212 ---> TYP 2012 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Peak capacitor discharge current versus pulse width. Fig.10 : Allowable peak capacitor discharge current versus initial junction temparature. 4/5 TYP 212 ---> TYP 2012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5