TYN606 TYN1006 ® SCR A FEATURES High surge capability High on-state current High stability and reliability ■ G ■ K ■ DESCRIPTION The TYN606 and TYN1006 Family of Silicon Controlled Rectifiers are high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 110°C 6 A IT(AV) Average on-state current (180° conduction angle, single phase circuit) Tc = 110°C 3.8 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 73 A tp = 10ms 70 I2t value tp = 10ms 24.5 A2s 50 A/µs -40 to +150 -40 to +125 °C 260 °C IT(RMS) I2t dI/dt Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/µs Tstg Tj Storage and operating junction temperature range Tl Maximum lead soldering temperature during 10s at 4.5mm from case TYN Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A Unit 606 1006 600 1000 V 1/4 TYN606 TYN1006 THERMAL RESISTANCE Symbol Parameter Rth (j-a) Rth (j-c) DC Value Unit Junction to ambient 60 °C/W Junction to case for DC 2.5 °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V ELECTRICAL CHARACTERISTICS Symbol Test conditions Value Unit IGT VD = 12V (DC) RL = 33Ω Tj = 25°C MAX. 15 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =110°C MIN. 0.2 V tgt VD = VDRM IG = 40mA dIG/dt = 0.5A/µs Tj = 25°C TYP. 2 µs IL IG = 1.2IGT Tj = 25°C TYP. 50 mA IH IT = 100mA Gate open Tj = 25°C MAX. 30 mA VTM ITM = 12A Tj = 25°C MAX. 1.6 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 2 Linear slope up to VD = 67% VDRM gate open Tj = 110°C MIN. 200 V/µs VD=67%VDRM ITM= 12A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs Tj = 110°C TYP. 70 µs dV/dt tq tp = 380µs Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 360 7 O 6 DC 4 = 180 3 = 120 = 90 2 = 60 1 2/4 Rth = 0 o C/W 5 o C/W 10 o C/W 15 o C/W 6 5 0 0.0 Tcase (oC) P (W) 7 1.0 1.5 2.0 2.5 o o o 3 o -120 2 1 IT(AV)(A) 3.0 -115 4 = 180 o = 30 o 0.5 5 3.5 -110 4.0 4.5 o Tamb ( C) 5.0 0 0 20 40 60 80 100 120 -125 140 TYN606 TYN1006 Fig. 3: Average on-state current versus case temperature. I T(AV) (A) Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 7 DC 6 Zth(j-c) 5 4 0.1 o = 180 Zth(j-a) 3 2 1 o tp(s) Tcase ( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). 3/4 TYN606 TYN1006 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B Millimeters Min. Typ. Max. Min. Typ. Max. C b2 A 15.20 a1 L F I A l4 c2 a1 Inches 15.90 0.598 3.75 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 l3 l2 a2 b1 M c1 e M 1.70 0.044 2.60 0.066 0.102 OTHER INFORMATION ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode TYNxx06 TYNxx06 TO-220AB 2.3 g 250 Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. 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