RURD420S Data Sheet January 2002 4A, 200V Ultrafast Diodes Features The RURD420S is an ultrafast diode with soft recovery characteristics (trr < 30ns). It has low forward voltage drop and has ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. It’s low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. • Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V • Avalanche Energy Rated • Planar Construction Applications • Switching Power Supplies Formerly developmental type TA49034. • Power Switching Circuits Ordering Information PART NUMBER RURD420S • General Purpose PACKAGE TO-252 BRAND Packaging RUR420 JEDEC STYLE TO-252 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, i.e., RURD420S9A. CATHODE (FLANGE) Symbol CATHODE ANODE K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURD420S UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 200 V 4 A 8 A 40 A (TC = 159oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 30 W Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering -65 to 175 oC (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 300 oC Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 260 oC Electrical Specifications SYMBOL VF TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP MAX UNITS IF = 4A - - 1.0 V IF = 4A, TC = 150oC - - 0.83 V ©2002 Fairchild Semiconductor Corporation RURD420S Rev. C RURD420S TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL MIN TYP MAX UNITS VR = 200V - - 100 µA VR = 200V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 100A/µs - - 30 ns IF = 4A, dIF/dt = 100A/µs - - 35 ns ta IF = 4A, dIF/dt = 100A/µs - 11 - ns tb IF = 4A, dIF/dt = 100A/µs - 9 - ns QRR IF = 4A, dIF/dt = 100A/µs - 12 - nC VR = 10V, IF = 0A - 15 - pF 5 oC/W IR trr CJ TEST CONDITION RθJC - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 8), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 8). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 8). QRR = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 100 175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 20 175oC 10 100oC 25oC 1 10 100oC 1 0.1 0.01 25oC 0.001 0.5 0 0.25 0.5 0.75 1 1.25 1.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURD420S Rev. C RURD420S Typical Performance Curves (Continued) 25 50 TC = 100oC, dIF/dt = 100A/µs TC = 25oC, dIF/dt = 100A/µs trr 15 ta 10 tb 5 40 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 20 trr 30 ta 20 tb 10 0 0 0.5 4 1 0.5 100 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 100A/µs trr 60 ta 40 tb 20 0 0.5 4 1 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 80 4 1 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 5 4 DC 3 SQ. WAVE 2 1 0 150 155 IF, FORWARD CURRENT (A) 160 165 170 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE CURRENT SENSE IGBT t1 IF + - VDD dIF dt trr ta tb 0 0.25 IRM t2 IRM FIGURE 7. trr TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation FIGURE 8. trr WAVEFORMS AND DEFINITIONS RURD420S Rev. C RURD420S Test Circuits and Waveforms (Continued) I = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 10. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURD420S Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7