VN02NSP VN02NPT HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS(on ) I OUT V CC VN02NSP 60 V 0.4 Ω 6A 26 V VN02NPT 60 V 0.4 Ω 6A 26 V ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN02NSP/VN02NPT are monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. 10 1 PowerSO-10TM PPAK The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM September 1997 1/10 VN02NSP/VN02NPT ABSOLUTE MAXIMUM RATING Symbol Parameter V (BR)DSS Drain-Source Breakdown Voltage Value PowerSO-10 PPAK 60 V Output Current (cont.) 6 A IR Reverse Output Current -6 A I IN Input Current ±10 mA -4 V ±10 mA 2000 V I OUT -V CC Reverse Supply Voltage I STAT Status Current V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Power Dissipation at T c ≤ 25 C Tj Junction Operating Temperature T stg o Storage Temperature CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/10 Unit 58 46 W -40 to 150 o C -55 to 150 o C VN02NSP/VN02NPT THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) PowerSO-10 PPAK 2.14 62.5 3.33 100 Max Max o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions VCC Supply Voltage R on On State Resistance I OUT = 3 A I OUT = 3 A Supply Current Off State On State IS Min. Typ. 7 T j = 25 o C T j ≥ 25 o C Max. Unit 26 V 0.8 0.4 Ω Ω 50 15 µA mA Max. Unit SWITCHING Symbol Parameter Test Conditions t d(on) Turn-on Delay Time Of Output Current I OUT = 3 A Resistive Load o Input Rise Time < 0.1 µs T j = 25 C 10 µs Rise Time Of Output Current I OUT = 3 A Resistive Load o Input Rise Time < 0.1 µs T j = 25 C 15 µs Turn-off Delay Time Of Output Current I OUT = 3 A Resistive Load o Input Rise Time < 0.1 µs T j = 25 C 15 µs Fall Time Of Output Current I OUT = 3 A Resistive Load o Input Rise Time < 0.1 µs T j = 25 C 6 µs (di/dt) on Turn-on Current Slope I OUT = 3 A I OUT = IOV 0.5 2 A/µs A/µs (di/dt) off Turn-off Current Slope I OUT = 3 A I OUT = IOV 2 4 A/µs A/µs Max. Unit 0.8 V (*) V tr t d(off) tf Min. Typ. LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage VIH Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Test Conditions Min. Typ. 2 0.5 Input Current V IN = 5 V 250 Input Clamp Voltage I IN = 10 mA I IN = -10 mA 6 -0.7 V 500 µA V V 3/10 VN02NSP/VN02NPT ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol V STAT (•) V USD Parameter Status Voltage Output Low Test Conditions Min. Typ. I STAT = 1.6 mA Under Voltage Shut Down Unit 0.4 V 6.5 V V V V SCL () Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA 6 -0.7 t SC Switch-off Time in Short Circuit Condition at Start-Up R LOAD < 10 mΩ T c = 25 o C 1.5 I OV Over Current R LOAD < 10 mΩ -40 T c 125 o C o Max. 5 ms 28 A 0.9 A I AV Average Current in Short Circuit I OL Open Load Current Level 5 T TSD Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C R LOAD < 10 mΩ T c = 85 C 70 mA (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. @NOTE = () Status determination > 100 µs after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). 4/10 The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02NSP/VN02NPT TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage X L H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN02NSP/VN02NPT Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN02NSP/VN02NPT RDS(on) vs Junction Temperature RDS(on) Vs Supply Voltage RDS(on) Vs Output Current Input Voltage vs Junction Temperature Output Current Derating Open Load vs Junction Temperature 7/10 VN02NSP/VN02NPT PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 3.35 TYP. 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 TYP. MAX. 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 α 0.071 0.067 0o 8o B 0.10 A B 10 = E4 = = = E1 = E3 = E2 = E = = = H 6 = = 1 5 B e 0.25 SEATING PLANE DETAIL "A" A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α 0068039-C 8/10 VN02NSP/VN02NPT PPAK MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.5 0.019 B2 5.2 5.4 0.204 0.212 C 0.45 0.53 0.017 0.021 C2 0.5 0.019 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 5.08 0.200 G1 2.54 0.100 H 9.35 10.1 L2 0.368 0.8 L4 0.397 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = G = = G1 1 = 2 = = = E = B2 3 B DETAIL "A" L4 9/10 VN02NSP/VN02NPT Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10