STMICROELECTRONICS VND10BSP

VND10BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
V DSS
R DS(on )
I OUT
V CC
VND10BSP
40 V
0.1 Ω
3.4 A
26 V
■
■
■
■
■
■
■
OUTPUT CURRENT (CONTINUOUS):
14A @ Tc = 85oC PER CHANNEL
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST
DEMAGNETIZATION
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on
state, open load in off state,
overtemperature conditions and stuck-on to VCC.
10
1
PowerSO-10
BLOCK DIAGRAM
March 1998
1/9
VND10BSP
ABSOLUTE MAXIMUM RATING
Symbol
V (BR)DSS
I OUT
Parameter
Value
Unit
Drain-Source Breakdown Voltage
40
V
Output Current (cont.) at T c = 85 o C
14
A
14
A
o
I OUT (RMS) RMS Output Current at T c = 85 C and f > 1Hz
o
IR
Reverse Output Current at T c = 85 C
-14
A
I IN
Input Current
±10
mA
-4
V
±10
mA
2000
V
-V CC
Reverse Supply Voltage
I STAT
Status Current
V ESD
Electrostatic Discharge (1.5 kΩ, 100 pF)
o
P tot
Power Dissipation at T c = 25 C
75
Tj
Junction Operating Temperature
-40 to 150
o
C
-55 to 150
o
C
T stg
Storage Temperature
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/9
W
VND10BSP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient ($)
Max
Max
o
1.65
60
o
C/W
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
VCC
In(*)
R on
IS
V DS(MAX)
Ri
Parameter
Test Conditions
Supply Voltage
Nominal Current
o
T c = 85 C V DS(on) ≤ 0.5 V CC = 13 V
On State Resistance
I OUT = In V CC = 13 V
Supply Current
Off State
Output to GND internal
Impedance
T j = 25 C
o
T j = 25 C
Maximum Voltage Drop I OUT = 7.5 A
o
T j = 85 o C
Min.
Typ.
Max.
Unit
6
13
26
V
5.2
A
3.4
0.065
V CC = 13 V
V CC = 13 V
o
T j = 25 C
35
1.2
0.1
Ω
100
µA
2
V
5
10
20
KΩ
Min.
Typ.
Max.
Unit
SWITCHING
Symbol
Parameter
t d(on) (^)
Turn-on Delay Time Of
Output Current
R out = 2.7 Ω
5
35
200
µs
Rise Time Of Output
Current
R out = 2.7 Ω
28
110
360
µs
Turn-off Delay Time Of
Output Current
R out = 2.7 Ω
10
140
500
µs
Fall Time Of Output
Current
R out = 2.7 Ω
28
75
360
µs
(di/dt) on
Turn-on Current Slope
R out = 2.7 Ω
0.003
0.1
A/µs
(di/dt) off
Turn-off Current Slope
R out = 2.7 Ω
0.005
0.1
A/µs
Max.
Unit
1.5
V
(•)
V
0.9
1.5
V
30
100
µA
6
-0.7
7
V
V
t r (^)
t d(off) (^)
tf (^)
Test Conditions
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
V IL
Input Low Level
Voltage
VIH
Input High Level
Voltage
3.5
V I(hyst.)
Input Hysteresis
Voltage
0.2
I IN
V ICL
T j = 25 o C
Input Current
V IN = 5 V
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
5
Typ.
3/9
VND10BSP
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
0.4
V
V STAT
Status Voltage Output
Low
V USD
Under Voltage Shut
Down
V SCL
Status Clamp Voltage
T TSD
Thermal Shut-down
Temperature
T SD(hyst.)
Thermal Shut-down
Hysteresis
TR
Reset Temperature
V OL
Open Voltage Level
Off-State (note 2)
2.5
4
5
V
I OL
Open Load Current
Level
On-State
0.6
0.9
1.4
A
t povl
Status Delay
(note 3)
5
10
µs
t pol
Status Delay
(note 3)
500
2500
µs
I STAT = 1.6 mA
I STAT = 10 mA
I STAT = -10 mA
3.5
4.5
6
V
5
6
-0.7
7
V
V
140
160
180
o
C
50
o
C
o
C
125
50
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
NOTE = (^) See switching time waveform
NOTE = (•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
NOTE = note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V
NOTE = note 2: IOL(off) = (VCC -VOL)/ROL
note 3:tpovl tpol: ISO definition.
Note 2 Relevant Figure
4/9
Note 3 Relevant Figure
VND10BSP
Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
Pdem = 0.5 • Lload •(Ιload)2 • [(VCC+Vdemag)/Vdemag]
•f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, it will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
5/9
VND10BSP
TRUTH TABLE
INPUT 1
INPUT 2
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
Channel 1
Channel 2
Channel 1
H
X
L
X
L
X
H
X
L
L
H
L
X
L
H
L
X
L
L
L(**)
Channel 2
X
L
H
L
X
L
H
L
L
L(**)
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
Thermal Shutdown
Open Load
Output Shorted to V CC
(**) with additional external resistor.
Figure 1: Waveforms
6/9
OUTPUT 1 OUTPUT 2
DIAGNOSTIC
VND10BSP
Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 3: Typical Application Circuit With Separate Signal Ground
7/9
VND10BSP
Power SO-10 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.35
3.65
0.132
0.144
A1
0.00
0.10
0.000
0.004
B
0.40
0.60
0.016
0.024
c
0.35
0.55
0.013
0.022
D
9.40
9.60
0.370
0.378
D1
7.40
7.60
0.291
0.300
E
9.30
9.50
0.366
0.374
E1
7.20
7.40
0.283
0.291
E2
7.20
7.60
0.283
0.300
E3
6.10
6.35
0.240
0.250
E4
5.90
6.10
0.232
e
1.27
0.240
0.050
F
1.25
1.35
0.049
0.053
H
13.80
14.40
0.543
0.567
1.80
0.047
h
0.50
L
0.002
1.20
q
1.70
α
0.071
0.067
0o
8o
B
0.10 A B
10
=
E4
=
=
=
E1
=
E3
=
E2
=
E
=
=
=
H
6
=
=
1
5
B
e
0.25
SEATING
PLANE
DETAIL "A"
A
C
M
Q
D
h
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
0068039-C
8/9
VND10BSP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
9/9