STMICROELECTRONICS VND10B(012Y)

VND10B
DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
TYPE
V DSS
R DS( on)
I n (*)
VC C
VND10B
40 V
0.1 Ω
3.4 A
26 V
■
■
■
■
■
■
■
OUTPUT CURRENT (CONTINUOUS):
14 A @ Tc=85oC PER CHANNEL
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST DEMAGNETIZATION
VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VND10B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to VCC.
HEPTAWATT
(vertical)
HEPTAWATT
(horizontal)
HEPTAWATT
(in-line)
ORDER CODES:
HEPTAWATT vertical
VND10B
HEPTAWATT horizontal VND10B (011Y)
HEPTAWATT in-line
VND10B (012Y)
BLOCK DIAGRAM
(*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1)
September 1994
1/11
VND10B
ABSOLUTE MAXIMUM RATING
Symbol
Value
Unit
40
V
Output Current (cont.) at T c = 85 C
14
A
I OU T(RMS) RMS Output Current at T c = 85 o C and f > 1Hz
14
A
V( BR)DSS
IO UT
Parameter
Drain-Source Breakdown Voltage
o
o
IR
Reverse Output Current at T c = 85 C
-14
A
II N
Input Current
±10
mA
-V CC
Reverse Supply Voltage
ISTA T
Status Current
VE SD
Electrostatic Discharge (1.5 kΩ, 100 pF)
P tot
Tj
T stg
o
Power Dissipation at T c = 25 C
V
mA
2000
V
75
W
Junction Operating Temperature
-40 to 150
o
Storage Temperature
-55 to 150
o
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
2/11
-4
±10
C
C
VND10B
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.65
60
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
VC C
In(*)
R on
IS
V DS(MAX)
Parameter
Test Conditions
Supply Voltage
Nominal Current
T c = 85 C V DS( on) ≤ 0.5 V CC = 13 V
o
On State Resistance
I OU T = I n V CC = 13 V
Supply Current
Off State
Maximum Voltage Drop I OU T = 13 A
Tj = 25 C
T j = 25 o C
VCC = 13 V
Tj = 85 o C
V CC = 13 V
o
T j = 25 C
Typ.
Max.
Unit
6
13
26
V
5.2
A
3.4
0.065
35
1.2
0.1
Ω
100
µA
2
V
5
10
20
KΩ
Min.
Typ.
Max.
Unit
Turn-on Delay Time Of R out = 2.7 Ω
Output Current
5
35
200
µs
R out = 2.7 Ω
28
110
360
µs
Turn-off Delay Time Of R out = 2.7 Ω
Output Current
10
140
500
µs
Fall Time Of Output
Current
R out = 2.7 Ω
28
75
360
µs
(di/dt) on
Turn-on Current Slope
R out = 2.7 Ω
0.003
0.1
A/µs
(di/dt) off
Turn-off Current Slope
R out = 2.7 Ω
0.005
0.1
A/µs
Max.
Unit
1.5
V
(•)
V
0.9
1.5
V
30
100
µA
6
-0.7
7
V
V
Ri
Output to GND internal
Impedance
o
Min.
SWITCHING
Symbol
td(on) (^)
t r (^)
td( off)(^)
tf (^)
Parameter
Rise Time Of Output
Current
Test Conditions
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
V IL
Input Low Level
Voltage
V IH
Input High Level
Voltage
3.5
V I(hy st.)
Input Hysteresis
Voltage
0.2
II N
V ICL
T j = 25 oC
Input Current
V IN = 5 V
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
5
Typ.
3/11
VND10B
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
I STAT = 1.6 mA
Max.
Unit
0.4
V
V STAT
Status Voltage Output
Low
V US D
Under Voltage Shut
Down
V SCL
Status Clamp Voltage
TTS D
Thermal Shut-down
Temperature
T SD( hys t. )
Thermal Shut-down
Hysteresis
TR
Reset Temperature
V OL
Open Voltage Level
Off-State (note 2)
2.5
4
5
V
I OL
Open Load Current
Level
On-State
0.6
0.9
1.4
A
tpovl
Status Delay
(note 3)
5
10
µs
tpol
Status Delay
(note 3)
500
2500
µs
I STAT = 10 mA
I STAT = -10 mA
3.5
4.5
6
V
5
6
-0.7
7
V
V
140
160
180
o
C
50
o
C
o
C
125
50
(*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1)
(^) See switching time waveform
(•) The VI H is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Current is the current at T c = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL( of f) = (VCC -VOL )/R OL
note 3: tpo vl tpol : ISO definiti on
Note 2 Relevant Figure
4/11
Note 3 Relevant Figure
VND10B
Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in
on-state, open load in off-state, over temperature
conditions and stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (Vdemag)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, both channel will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
– The undervoltage shutdown level is increased by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of Vih, Vil and
Vstat. This solution allows the use of a standard
diode.
5/11
VND10B
TRUTH TABLE
INPUT 1
INPUT 2
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
Channel 1
H
X
L
X
L
Channel 2
X
H
X
L
L
Channel 1
H
L
X
L
H
L
X
L
L
L(**)
Channel 2
X
L
H
L
X
L
H
L
L
L(**)
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
Thermal Shutdown
Open Load
Output Shorted to VC C
Figure 1: Waveforms
6/11
OUTPUT 1 OUTPUT 2
DIAGNOSTIC
VND10B
Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 3: Typical Application Circuit With Separate Signal Ground
7/11
VND10B
Heptawatt (vertical) MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F1
G
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
MIN.
mm
TYP.
2.4
1.2
0.35
0.6
2.41
4.91
7.49
2.54
5.08
7.62
10.05
MAX.
4.8
1.37
2.8
1.35
0.55
0.8
0.9
2.67
5.21
7.8
10.4
10.4
MIN.
0.094
0.047
0.014
0.024
0.095
0.193
0.295
MAX.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
0.668
0.587
0.848
0.891
3
15.8
6.6
2.8
5.08
0.100
0.200
0.300
0.396
16.97
14.92
21.54
22.62
2.6
15.1
6
inch
TYP.
0.102
0.594
0.236
0.118
0.622
0.260
0.110
0.200
P023A
8/11
VND10B
Heptawatt (horizontal) MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F1
G
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
L9
Dia
MIN.
mm
TYP.
2.4
1.2
0.35
0.6
2.41
4.91
7.49
2.54
5.08
7.62
10.05
MAX.
4.8
1.37
2.8
1.35
0.55
0.8
0.9
2.67
5.21
7.8
10.4
10.4
MIN.
0.094
0.047
0.014
0.024
0.095
0.193
0.295
MAX.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
0.559
0.173
0.622
0.201
3
15.8
6.6
0.102
0.594
0.236
3.85
0.144
4.44
3.65
0.100
0.200
0.300
0.396
14.2
4.4
15.8
5.1
2.6
15.1
6
inch
TYP.
0.118
0.622
0.260
0.175
0.152
P023B
9/11
VND10B
Heptawatt (In-Line) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.6
0.8
0.024
0.031
F1
0.9
0.035
G
2.41
2.54
2.67
0.095
0.100
0.105
G1
4.91
5.08
5.21
0.193
0.200
0.205
G2
7.49
7.62
7.8
0.295
0.300
0.307
H2
10.4
0.409
H3
10.05
10.4
0.396
0.409
L2
22.4
22.9
0.882
0.902
L3
25.4
26
1.000
1.024
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
Dia
3.65
3.85
0.144
0.152
P023C
10/11
VND10B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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