STMICROELECTRONICS VN16BSP

VN16BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
Table 1. General Features
Figure 1. Package
Type
VDSS
RDS(on)
IOUT
VCC
VN16BPS
40 V
0.06 Ω
5.6 A
26 V
■
MAXIMUM CONTINUOUS OUTPUT
CURRENT: 20 A @ Tc= 85°C
■
5V LOGIC LEVEL COMPATIBLE INPUT
■
THERMAL SHUT-DOWN
■
UNDER VOLTAGE PROTECTION
■
OPEN DRAIN DIAGNOSTIC OUTPUT
■
INDUCTIVE LOAD FAST DEMAGNETIZATION
■
VERY LOW STAND-BY POWER
DISSIPATION
10
1
PowerSO-10
DESCRIPTION
The VN16BPS is a monolithic device made using
STMicroelectronics
VIPower
Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
VCC and overtemperature. Fast demagnetization
of inductive loads is achieved by negative (-18V)
load voltage at turn-off.
Table 2. Order Codes
Package
Tube
Tape and Reel
PowerSO-10
VN16BSP
VN16BSP13TR
REV. 2
June 2004
1/11
VN16BSP
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Breakdown Voltage
40
V
Output Current (cont.) at Tc = 85 °C
20
A
RMS Output Current at Tc = 85 °C
20
A
IR
Reverse Output Current at Tc = 85 °C (f > 1Hz)
–20
A
IIN
Input Current
±10
mA
– VCC
Reverse Supply Voltage
–4
V
ISTAT
Status Current
±10
mA
VESD
Electrostatic Discharge (1.5 kΩ, 100 pF)
2000
V
IOUT
IOUT(RMS)
Ptot
Power Dissipation at Tc = 25 °C
82
W
Tj
Junction Operating Temperature
-40 to 150
°C
Storage Temperature
-55 to 150
°C
Tstg
2/11
VN16BSP
Figure 3. Connection Diagrams
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient (1) Max
50
°C/W
Note: 1. When mounted using minimum recommended pad size on FR-4 board.
3/11
VN16BSP
ELECTRICAL CHARACTERISTICS
(8 < VCC < 16 V; -40 ≤ Tj ≤ 125 °C unless otherwise specified)
Table 5. Power
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
6
13
26
V
5.6
8.8
A
0.038
0.06
Ω
50
µA
1.8
V
20
KΩ
VCC
Supply Voltage
In(2)
Nominal Current
Tc = 85 °C; VDS(on) ≤ 0.5; VCC = 13 V
Ron
On State Resistance
IOUT = In; VCC = 13 V; Tj = 25 °C
Supply Current
Off State; VCC = 13 V; Tj ≥ 25 °C
VDS(MAX)
Maximum Voltage Drop
IOUT = 20 A; VCC = 13 V; Tc = 85 °C
1
Rj
Output to GND Internal
Impedance
Tj = 25 °C
5
IS
25
10
Note: 2. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C
for battery voltage of 13V which produces a voltage drop of 0.5 V.
Table 6. Switching
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Delay Time Of
Output Current
Rload = 1.6 Ω
5
50
500
µs
Rise Time Of Output
Current
Rload = 1.6 Ω
40
100
680
µs
Turn-off Delay Time Of
Output Current
Rload = 1.6 Ω
10
100
500
µs
Fall Time Of Output
Current
Rload = 1.6 Ω
40
100
680
µs
(di/dt)on
Turn-on Current Slope
Rload = 1.6 Ω; VCC = 13 V
0.008
0.1
A/µs
(di/dt)off
Turn-off Current Slope
Rload = 1.6 Ω; VCC = 13 V
0.008
0.1
A/µs
Vdemag
Inductive Load Clamp
Voltage
Rload = 1.6 Ω; L = 1 mH
td(on)(3)
tr(3)
td(off)(3)
tf(3)
–24
–18
–14
V
Min.
Typ.
Max.
Unit
1.5
V
Note 4
V
1.5
V
100
µA
7
V
V
Note: 3. See Switching Time Waveforms.
Table 7. Logic Input
Symbol
Parameter
Test Conditions
VIL
Input Low Level Voltage
VIH
Input High Level Voltage
3.5
VI(hyst)
Input Hysteresis Voltage
0.2
IIN
VICL
Input Current
VIN = 5 V; Tj = 25 °C
Input Clamp Voltage
IIN = 10 mA
IIN = –10 mA
5
1
6
–0.7
Note: 4. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated
to not exceed 10 mA at the input pin.
4/11
VN16BSP
ELECTRICAL CHARACTERISTICS (cont’d)
Table 8. Protection and Diagnostics (cont’d)
Symbol
Parameter
VSTAT
Status Voltage Output Low
VUSD
Under Voltage Shut Down
VSCL
Status Clamp Voltage
TTSD
Thermal Shut-down Temperature
TSD(hyst.)
Test Conditions
Min.
ISTAT = 1.6 mA
ISTAT = 10 mA
ISTAT = –10 mA
5
6
–0.7
7
V
V
140
160
180
°C
15
50
°C
Open Voltage Level
Off-State
2.5
Open Load Current Level
On-State
0.15
Status Delay
V
V
VOL(5)
tpol(6)
0.4
6
Reset Temperature
Status Delay
Unit
5
Thermal Shut-down Hysteresis
tpovl(6)
Max.
3.5
TR
IOL
Typ.
125
50
°C
3.8
5
V
0.85
A
5
10
µs
400
2500
µs
Note: 5. IOL(off) = (VCC -VOL)/ROL (see figure 5).
6. tpovl tpol: ISO definition (see figure 6).
Figure 5. Note 5 relevant figure
Figure 6. Note 6 relevant figure
5/11
VN16BSP
Figure 7. Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in offstate, over temperature conditions and stuck-on to
VCC.
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case
of overtemperature (tpovl) and in case of open
load (tpol) respectively. This feature allows to
discriminate the nature of the detected fault. To
protect the device against short circuit and over
current condition, the thermal protection turns the
integrated Power MOS off at a minimum junction
temperature of 140 °C. When this temperature
returns to 125°C the switch is automatically turned
on again. In short circuit the protection reacts with
virtually no delay, the sensor being located inside
the Power MOS area. An internal function of the
devices ensures the fast demagnetization of
inductive loads with a typical voltage (Vdemag) of 18V. This function allows to greatly reduces the
power dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/
Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
6/11
according to the above formula. In this device if the
GND pin is disconnected, with VCC not exceeding
16V, it will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Figure 10).
The consequences of the voltage drop across this
diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by Vf with
respect to power GND).
– The undervoltage shutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in Figure 10), which
becomes the common signal GND for the whole
control board avoiding shift of VIH, VIL and VSTAT.
This solution allows the use of a standard diode.
VN16BSP
Table 9. Truth Table
Input
Output
Diagnostic
Normal Operation
L
H
L
H
H
H
Over-temperature
X
L
L
Under-voltage
X
L
H
Short load to VCC
H
L
H
H
L
L
Open Circuit
H
L
H
L
L
L(7)
Note: 7. With an additional external resistor.
Figure 8. Waveforms
7/11
VN16BSP
Figure 9. Over Current Test Circuit
Figure 10. Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 11. Typical Application Circuit With Separate Signal Ground
8/11
VN16BSP
PACKAGE MECHANICAL
Table 10. Power SO-10 Mechanical Data
Symbol
millimeters
Typ
Min
3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
A
A (8)
A1
B
B (8)
C
C (8)
D
D1
E
E2
E2 (8)
E4
E4 (8)
e
F
F (8)
H
H (8)
h
L
F (8)
a
α (8)
Max
3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
1.27
1.25
1.20
13.80
13.85
1.35
1.40
14.40
14.35
0.50
1.20
0.80
0º
2º
1.80
1.10
8º
8º
Note: 8. Muar only POA P013P.
Figure 12. Power SO-10 Package Dimensions
B
0.10 A B
10
H
E
E2
E4
1
SEATING
PLANE
e
B
DETAIL "A"
h
A
C
0.25
D
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
P095A
Note: Drawing is not to scale.
9/11
VN16BSP
REVISION HISTORY
Table 11. Revision History
Date
Revision
March-1998
1
First Issue
18-June-2004
2
Stylesheet update. No content change.
10/11
Description of Changes
VN16BSP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States
www.st.com
11/11