VNQ660SP ® QUAD CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VNQ660SP RDS(on) 50mΩ (*) IOUT 6A VCC 36 V (*) Per each channel OUTPUT CURRENT PER CHANNEL: 6A ■ CMOS COMPATIBLE INPUTS ■ OPEN LOAD DETECTION (OFF STATE) ■ UNDERVOLTAGE & OVERVOLTAGE nSHUT- DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT-DOWN ■ CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ PROTECTION AGAINST: nLOSS OF GROUND & LOSS OF VCC ■ REVERSE BATTERY PROTECTION (**) ■ DESCRIPTION The VNQ660SP is a monolithic device made by using| STMicroelectronics VIPower M0-3 10 1 PowerSO-10™ ORDER CODES PACKAGE TUBE PowerSO-10™ VNQ660SP T&R VNQ660SP13TR Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Builtin thermal shut down and output current limitation protect the chip from over temperature and short circuit. ABSOLUTE MAXIMUM RATING Symbol VCC -VCC IOUT IR IIN ISTAT IGND VESD Ptot Tj Tstg EC Parameter Supply voltage (continuous) Reverse supply voltage (continuous) Output current (continuous), per each channel Reverse output current (continuous), per each channel Input current Status current Ground current at TC<25°C (continuous) Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) Value 41 -0.3 Internally limited -15 +/- 10 +/- 10 -200 Unit V V A A mA mA mA - INPUT 4000 V - STATUS 4000 V - OUTPUT 5000 V 5000 113.6 -40 to 150 -65 to 150 150 V W °C °C mJ - VCC Power dissipation at TC=25°C Junction operating temperature Storage temperature Non repetitive clamping energy at TC=25°C (**) See application schematic at page 8 July 2003 1/16 VNQ660SP BLOCK DIAGRAM VCC OVERVOLTAGE UNDERVOLTAGE DEMAG 1 DRIVER 1 OUTPUT 1 ILIM1 INPUT 1 DEMAG 2 INPUT 2 DRIVER 2 INPUT 3 OUTPUT 2 ILIM2 LOGIC DEMAG 3 INPUT 4 DRIVER 3 STATUS OUTPUT 3 ILIM3 STATUS DEMAG 4 DRIVER 4 OVERTEMP. 1 OUTPUT 4 ILIM4 OVERTEMP. 2 OPEN LOAD OFF-STATE OVERTEMP. 3 OVERTEMP. 4 GND CURRENT AND VOLTAGE CONVENTIONS IS IIN1 INPUT 1 VCC OUTPUT 1 IIN2 VIN1 INPUT 2 VIN2 IOUT3 INPUT 3 VOUT2 VOUT3 IOUT4 OUTPUT 4 INPUT 4 STATUS VSTAT 2/16 VOUT1 OUTPUT 3 VIN3 IIN4 VIN4 IOUT2 OUTPUT 2 IIN3 VCC IOUT1 ISTAT VOUT4 GND IGND VNQ660SP CONNECTION DIAGRAM (TOP VIEW) 5 4 3 6 7 8 9 10 STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1 2 1 GND OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1 11 VCC THERMAL DATA Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case (MAX) (all channels on) Thermal resistance junction-ambient (MAX) Value 1.1 51.1 (*) Unit °C/W °C/W (*) When mounted on a standard single-sided FR-4 board with 0.5cm² of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (VCC=6V up to 24V; -40°C<Tj<150°C unless otherwise specified) POWER (per each channel) Symbol VCC (**) VUSD (**) VUVhyst (**) VOV (**) VOVhyst (**) Parameter Operating supply voltage Undervoltage shutdown Undervoltage hysteresis Overvoltage shutdown Overvoltage hysteresis Test Conditions Min 6 3.5 0.2 36 0.25 Off state; Input=0V; VCC=13.5V IS (**) RDS(on) IL(off1) IL(off2) IL(off3) IL(off4) Supply current Typ 13 4.6 Max 36 6 1 12 40 Unit V V V V V µA Off state; Input=0V; VCC=13.5V Tj=25°C 12 25 µA On state Input=3.25V; 9V<VCC<18V IOUT=1A; Tj=25°C; 9V<VCC<18V 6 40 12 50 mA mΩ On state resistance IOUT=1A, Tj=150°C; 9V<VCC<18V 85 100 mΩ Off state output current Off State Output Current Off State Output Current Off State Output Current IOUT=1A; VCC=6V VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; VCC=13V; Tj =125°C VIN=VOUT=0V; VCC=13V; Tj =25°C 130 50 0 5 3 mΩ µA µA µA µA 0 -75 (**) Per device. 3/16 VNQ660SP ELECTRICAL CHARACTERISTICS (continued) SWITCHING (VCC=13V) Symbol td(on) td(off) Parameter Turn-on delay time Turn-on delay time Test Conditions RL=13Ω channels 1,2,3,4 RL=13Ω channels 1,2,3,4 dVOUT/dt(on) Turn-on voltage slope RL=13Ω channels 1,2,3,4 dVOUT/dt(off) Turn-off voltage slope RL=13Ω channels 1,2,3,4 Min Typ 40 40 See relative diagram See relative diagram Max 70 140 Unit µs µs Typ 170 Max 200 15 10 25 18 Unit °C °C °C A 18 A V/µs V/µs PROTECTIONS (per each channel) Symbol TTSD TR Thyst Ilim Vdemag VSTAT Parameter Shutdown temperature Reset temperature Thermal hysteresis DC Short circuit current Turn-off output voltage clamp Status low output CSTAT voltage Status leakage current Status pin input capacitance VSCL Status clamp voltage ILSTAT Test Conditions 9V<VCC<36V Min 150 135 7 6 6V<VCC<36V IOUT=2A; VIN=0V; L=6mH VCC-41 VCC-48 VCC-55 V ISTAT=1.6mA 0.5 V Normal operation; VSTAT=5V 10 µA Normal operation; VSTAT=5V 25 pF 8 V ISTAT=1mA 6 ISTAT=-1mA 6.8 -0.7 V LOGIC INPUT (per each channel) Symbol VIL VIH VHYST IIH IIL CIN VICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input high level voltage Input Current Input Capacitance Input Clamp Voltage Test Conditions Min Typ Max 1.25 3.25 0.5 VIN=3.25V VIN=1.25V 1 10 IIN=1mA 6 IIN=-1mA 6.8 40 8 -0.7 Unit V V V µA µA pF V V OPENLOAD DETECTION (off state) per each channel Symbol tSDL VOL TDOL Parameter Status Delay Openload Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions Min Typ Max 20 Unit µs 1.5 2.5 3.5 V 300 µs (*) VIN=0V VCC=18V (*) (*) See Figure 1 4/16 VNQ660SP ELECTRICAL TRANSIENT REQUIREMENTS ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 I II -25 V +25 V -25 V +25 V -4 V -50 V +50 V -50 V +50 V -5 V TEST LEVELS III IV -75 V +75 V -100 V +75 V -6 V -100 V +100 V -150 V +100 V -7 V Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω Test Levels Result ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 Class C E I C C C C C C II C C C C C E III C C C C C E IV C C C C C E Contents All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. SWITCHING CHARACTERISTICS VLOAD 90% 80% dVOUT/dt(off) dVOUT/dt (on) 10% t VIN td(on) tr td(off) t 5/16 1 VNQ660SP TRUTH TABLE (per each channel) CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L Figure 1: Status timing waveforms OPENLOAD STATUS TIMING OVERTEMP STATUS TIMING VIN VIN VSTAT VSTAT tDOL 6/16 2 tSDL tSDL tSDL VNQ660SP Figure 2: Waveforms NORMAL OPERATION INPUTn LOAD VOLTAGEn STATUS UNDERVOLTAGE VUSDhyst VCC VUSD INPUTn LOAD VOLTAGEn STATUSn undefined OVERVOLTAGE VCC<VOV VCC>VOV VCC INPUTn LOAD VOLTAGEn STATUSn OPENLOAD with external pull-up INPUTn LOAD VOLTAGEn VOL STATUSn tDOL Tj TTSD TR tDOL OVERTEMPERATURE INPUTn LOAD CURRENTn STATUSn 7/16 VNQ660SP APPLICATION SCHEMATIC +5V +5V VCC1,2 Rprot STATUS Dld Rprot INPUT1 OUTPUT1 µC Rprot INPUT2 OUTPUT2 Rprot INPUT3 OUTPUT3 INPUT4 OUTPUT4 Rprot GND RGND VGND DGND Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / (IS(on)max). 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device 8/16 1 VNQ660SP ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ. Recommended Rprot value is 10kΩ. If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. 9/16 VNQ660SP High Level Input Current Off State Output Current IL(off1) (µA) Iih (µA) 10 7 9 6 Off state Vcc=24V Vout=0V 8 7 Vin=3.25V 5 6 4 5 3 4 3 2 2 1 1 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 150 175 100 125 150 175 100 125 150 175 Tc (ºC) Input Clamp Voltage Input High Level Vicl (V) Vih (V) 3.6 8 7.8 3.4 Iin=1mA 7.6 3.2 7.4 3 7.2 2.8 7 6.8 2.6 6.6 2.4 6.4 2.2 6.2 2 6 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 Tc (ºC) Tc (ºC) Input Low Level Input Hysteresis Voltage Vil (V) Vhyst (V) 2.8 2 2.6 1.8 1.6 2.4 1.4 2.2 1.2 2 1 1.8 0.8 1.6 0.6 1.4 0.4 1.2 0.2 1 0 -50 -25 0 25 50 75 Tc (ºC) 10/16 1 100 125 150 175 -50 -25 0 25 50 75 Tc (ºC) VNQ660SP ILIM Vs Tcase Overvoltage Shutdown Vov (V) Ilim (A) 20 54 52 17.5 50 15 48 12.5 46 44 10 42 7.5 40 5 38 2.5 36 34 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 Tc (ºC) 75 100 125 150 175 100 125 150 175 Tc (ºC) Turn-on Voltage Slope Turn-off Voltage Slope dVout/dt(on) (V/ms) dVout/dt(off) (V/ms) 500 700 450 600 Vcc=13V Rl=13Ohm 400 Vcc=13V Rl=13Ohm 500 350 300 400 250 300 200 150 200 100 100 50 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 Tc (ºC) On State Resistance Vs Tcase On State Resistance Vs VCC RDS(on) (mOhm) RDS(on) (mOhm) 100 100 90 90 Iout=1A Iout=1A 80 Tc=150ºC 80 Vcc=9V; 13V; 18V 70 70 60 60 50 50 40 40 30 30 20 20 10 10 Tc=25ºC 0 Tc= - 40ºC 0 -50 -25 0 25 50 75 Tc (ºC) 100 125 150 175 8 9 10 11 12 13 14 15 16 17 18 19 20 Vcc (V) 11/16 1 VNQ660SP Status Leakage Current Status Clamp Voltage Vscl (V) Ilstat (µA) 8 0.05 7.8 0.045 Istat=1mA Vstat=5V 7.6 0.04 7.4 0.035 7.2 0.03 7 0.025 6.8 0.02 6.6 0.015 6.4 0.01 6.2 0.005 6 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 150 175 Tc (ºC) Status Low Output Voltage Open Load Off State Voltage Detection Threshold Vstat (V) Vol (V) 5 0.6 4.5 0.525 Vin=0V Istat=1.6mA 4 0.45 3.5 0.375 3 2.5 0.3 2 0.225 1.5 0.15 1 0.075 0.5 0 0 -50 -25 0 25 50 75 Tc (ºC) 12/16 1 100 125 150 175 -50 -25 0 25 50 75 Tc (ºC) 100 125 150 175 VNQ660SP PowerSO-10™ THERMAL DATA PowerSO-10™ PC Board Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2). Rthj-amb Vs. PCB copper area in open box free air condition RTHj_amb (°C/W) 55 Tj-Tamb=50°C 50 45 40 35 30 0 2 4 6 8 10 PCB Cu heatsink area (cm^2) 13/16 VNQ660SP PowerSO-10™ MECHANICAL DATA mm. DIM. MIN. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) α α (*) inch TYP 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 MAX. MIN. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 1.80 1.10 8º 8º 0.047 0.031 0º 2º 1.27 TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 1.25 1.20 13.80 13.85 0.50 0.053 0.055 0.567 0.565 0.002 1.20 0.80 0º 2º 0.070 0.043 8º 8º (*) Muar only POA P013P B 0.10 A B 10 H E E E2 1 SEATING PLANE e B DETAIL "A" A C 0.25 h E4 D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α P095A 14/16 1 VNQ660SP PowerSO-10™ SUGGESTED PAD LAYOUT TUBE SHIPMENT (no suffix) 14.6 - 14.9 CASABLANCA B 10.8- 11 MUAR C 6.30 C A A 0.67 - 0.73 10 9 1 9.5 2 3 B 0.54 - 0.6 All dimensions are in mm. 8 7 4 5 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) 6 Casablanca Muar 50 50 1000 1000 532 532 A B C (± 0.1) 10.4 16.4 4.9 17.2 0.8 0.8 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 24 4 24 1.5 1.5 11.5 6.5 2 End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 15/16 1 VNQ660SP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 16/16