VN750 / VN750S / VN750-B5 HIGH SIDE DRIVER TYPE VN750 RDS(on) IOUT VCC VN750S 60 mΩ 6A 36 V VN750-B5 CMOS COMPATIBLE INPUT ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ PENTAWATT SO-8 ■ ■ REVERSE BATTERY PROTECTION (*) DESCRIPTION The VN750, VN750S, VN750-B5 are a monolithic device designed in STMicroelectronics VIPower Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation P2PAK ORDER CODES : PENTAWATT SO-8 P2PAK VN750 VN750S VN750-B5 combined with thermal shutdown and automatic restart protect the device against overload. The device detects open load condition both is on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. BLOCK DIAGRAM VC C OVERVOLTAGE DETECTION VCC CLAMP UNDERVOLTAGE DETECTION GND Power CLAMP DRIVER INPUT OUTPUT LOGIC CURRENT LIMITER ON STATE OPENLOAD DETECTION STATUS OVERTEMPERATURE DETECTION OFF STATE OPENLOAD AND OUTPUT SHORTED TO V CC DETECTION (*) See application schematic at page 8 January 2000 1/15 1 VN750 / VN750S / VN750-B5 ABSOLUTE MAXIMUM RATING Symbol VCC - V CC - Ignd IOUT - IOUT IIN ISTAT VESD Ptot Tj Tc Tstg Parameter SO-8 DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (R=1.5KΩ; C=100pF) Power Dissipation TC=25°C Junction Operating Temperature Case Operating Temperature Storage Temperature 3.1 Value PENTAWATT 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 2000 42 Internally Limited - 40 to 150 - 55 to 150 P2PAK 42 CONNECTION DIAGRAM (TOP VIEW) VCC OUTPUT OUTPUT VCC 5 4 8 1 N.C. STATUS INPUT GND SO-8 5 OUTPUT 4 STATUS 3 V CC 2 INPUT 1 GND P2PAK PENTAWATT CURRENT AND VOLTAGE CONVENTIONS ICC IIN VCC INPUT ISTAT IOUT STATUS VCC OUTPUT GND VIN VSTAT 2/15 1 IGND VOUT Unit V V mA A A mA mA V W °C °C °C VN750 / VN750S / VN750-B5 THERMAL DATA Symbol Parameter Rthj-pins Thermal Resistance Junction-pins Rthj-amb Thermal Resistance Junction-ambient Rthj-case Thermal Resistance Junction-case Max Max Max S0-8 40 Value PENTAWATT - P2PAK - °C/W 120 60 60 °C/W - 3 3 °C/W Unit ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified) POWER Symbol VCC VUSD VUSDhyst VOV RON IS IL(off1) IL(off2) Parameter Operating Supply Voltage Under Voltage Shut-down Under Voltage Shut-down Hysteresis Overvoltage Shut-down On State Resistance Supply Current Off State Output Current Off State Output Current Test Conditions Min 5.5 3 Typ 13 4 Max 36 5.5 0.5 36 IOUT=2A; Tj=25°C; VCC>8V IOUT=2A; VCC>8V Off State; VCC=13V On State; VCC=13V VIN=VOUT=0V VIN=0V; VOUT =3.5V (*) V 48 60 V mΩ 10 2 (*) 120 25 3.5 50 0 mΩ µA mA µA µA Typ Max Unit (*) 0 -75 Unit V V SWITCHING (VCC=13V) Symbol Parameter td(on) Turn-on Delay Time td(off) Turn-off Delay Time dVOUT/ dt(on) dVOUT/ dt(off) Turn-on Voltage Slope Turn-off Voltage Slope Test Conditions RL=6.5Ω from VIN rising edge to VOUT=1.3V RL=6.5Ω from VIN falling edge to VOUT=11.7V RL=6.5Ω from VOUT=1.3V to VOUT=10.4V RL=6.5Ω from VOUT=11.7V to VOUT=1.3V Min 40 µs 30 µs (*) V/µs (*) V/µs INPUT PIN Symbol VIL IIL VIH IIH Vhyst VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN=1.25V Min 1 3.25 VIN=3.25V IIN=1mA IIN=-1mA 0.5 6.5 Typ (*) (*) (*) (*) (*) (*) -0.7 Max 1.25 10 8.5 Unit V µA V µA V V V (*) See curves at pages 9, 10, 11 3/15 1 VN750 / VN750S / VN750-B5 ELECTRICAL CHARACTERISTICS (continued) STATUS PIN Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT=1.6mA Status Leakage Current Normal Operation VSTAT=5V Status Pin Input Normal Operation VSTAT=5V Capacitance ISTAT=1mA Status Clamp Voltage ISTAT=-1mA Min Typ (*) (*) 6.5 (*) Max 0.5 10 Unit V µA 100 pF 8.5 V -0.7 V PROTECTIONS Symbol T TSD TR Thyst tSDL Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status delay in overload condition Ilim Current limitation Vdemag Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 6 9 5V<VCC<36V IOUT =2A; VIN=0V; L=6mH Unit °C °C °C 20 µs 15 A 15 A 15 Tj>Tjsh 9V<VCC<36V Max 200 VCC-41 VCC-48 VCC-55 V OPENLOAD DETECTION Symbol IOL tDOL(on) VOL tDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Test Conditions VIN=5V Min Typ Max Unit 50 (*) 200 mA 200 µs 3.5 V 1000 µs IOUT=0A VIN=0V 1.5 Threshold Openload Detection Delay at Turn Off (*) (*) See curves at pages 9, 10, 11 OPEN LOAD STATUS TIMING (with external pull-up) IOUT< IOL VOUT > VOL OVER TEMP STATUS TIMING T j > Tjsh VIN VIN VSTAT VSTAT tDOL(off) tDOL(on) tSDL tSDL 4/15 2 1 VN750 / VN750S / VN750-B5 Switching time Waveforms VOUT 90% 80% dVOUT/dt(off) dVOUT /dt(on) 10% t VIN td(on) td(off) t TRUTH TABLE CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H L H L H L H L H L H OUTPUT L H L X L L L L L L H H L H STATUS H H H H H L X X H H L H H L 5/15 1 VN750 / VN750S / VN750-B5 ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN TEST LEVELS ISO T/R 7637/1 Test Pulse I II III IV 1 2 3a 3b 4 5 -25 V +25 V -25 V +25 V -4 V +26.5 V -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E 6/15 1 I C C C C C C TEST LEVELS RESULTS II III C C C C C C C C C C E E Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. VN750 / VN750S / VN750-B5 Figure1: Waveforms NORMAL OPERATION INPUT LOAD VOLTAGE STATUS UNDERVOLTAGE VUSDhyst VCC VUSD INPUT LOAD VOLTAGE STATUS undefined OVERVOLTAGE VCC<V OV VCC>V OV VCC INPUT LOAD VOLTAGE STATUS OPEN LOAD with external pull-up INPUT VOUT>VOL LOAD VOLTAGE VOL STATUS OPEN LOAD without external pull-up INPUT LOAD VOLTAGE STATUS Tj TTSD TR OVERTEMPERATURE INPUT LOAD CURRENT STATUS 7/15 1 1 VN750 / VN750S / VN750-B5 APPLICATION SCHEMATIC +5V +5V VCC Rprot STATUS Dld µC Rprot INPUT OUTPUT GND VGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / (I S(on)max). 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device will be driving an inductive load. RGND DGND This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j 600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION Dld is necessary (Transil or MOV) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak /Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ. Recommended Rprot value is 10kΩ. 8/15 1 1 VN750 / VN750S / VN750-B5 Off State Output Current High Level Input Current IIH(µA) IL(off1) (µA) 11 10 2.5 Off state Vcc=36V VIN=VOUT=0V 2.0 1.5 VIN=3.25V 9 8 7 6 1.0 5 0.5 4 0.0 3 -0.5 2 1 -1.0 -50 -25 25 0 50 75 100 125 150 Tc (°C) Input Clamp Voltage 0 -50 -25 0 25 50 75 100 125 150 Tc(°C) Status Leakage Current VI CL (V) ILSTAT (µA) 10.0 0.250 9.5 0.200 9.0 Vstat=5V 8.5 0.150 8.0 0.100 7.5 0.050 7.0 6.5 0.000 6.0 IIN=1mA 5.5 -0.050 -0.100 5.0 -50 -25 25 0 50 75 100 125 150 -50 Tc(°C) Status Low Output Voltage -25 0 25 50 75 100 75 100 125 150 Tc(°C) Status Clamp Voltage VSCL (V) VSTAT (V) 9.5 0.550 9.0 0.500 Istat=1mA Istat=1.6mA 0.450 8.5 0.400 8.0 0.350 7.5 0.300 7.0 0.250 0.200 6.5 0.150 6.0 0.100 5.5 -50 -25 0 25 50 75 100 125 150 Tc(°C) -50 -25 0 25 50 125 150 Tc(°C) 9/15 1 VN750 / VN750S / VN750-B5 On State Resistance Vs Tcase On State Resistance Vs VCC RON (mOhm) 120 RON (mOhm) 130 IOUT=2A Vcc=8V; 13V; 36V 110 Iout=2A Tc=-40°C; 25°C; 125 °C; 150°C 120 100 110 90 100 150°C 80 90 70 80 60 70 50 60 40 50 25°C 30 40 -40°C 20 30 125°C 20 10 -50 -25 0 25 50 75 100 125 5 150 Tc(°C) Openload On State Detection Threshold 10 15 20 25 30 35 Vcc (V) Input High Level VIH (V) IOL (mA) 220 3.3 200 3.2 Vcc=13V VIN=5V 180 160 3.1 140 3.0 120 2.9 100 2.8 80 2.7 60 2.6 40 2.5 20 -50 -25 0 25 50 75 100 125 150 Tc(°C) Input Low Level -50 -25 0 25 50 75 100 125 150 Tc(°C) 75 100 125 150 Tc(°C) Input Hysteresis Voltage VIL (V) VHYST (V) 2.1 1.4 2.0 1.3 1.9 1.2 1.8 1.1 1.7 1.0 1.6 0.9 1.5 0.8 1.4 0.7 1.3 0.6 1.2 0.5 0.4 1.1 -50 -25 0 25 50 75 100 125 150 Tc(°C) -50 -25 0 25 50 10/15 1 1 VN750 / VN750S / VN750-B5 Overvoltage Shutdown Openload Off State Voltage Detection Threshold VOL (V) VOV (V) 46 3.50 VIN=0V 45 3.25 44 3.00 43 42 2.75 41 2.50 40 2.25 39 2.00 38 37 1.75 36 1.50 35 1.25 -50 -25 0 25 50 75 100 125 150 Tc(°C) Turn-on Voltage Slope 0 25 50 75 100 125 150 Tc(°C) dVOUT/dt(off) (V/ms) 450 Rl=6.5Ohm 300 -25 Turn-off Voltage Slope dVOUT/dt(on) (V/ms) 325 -50 Rl=6.5Ohm 400 275 350 250 225 300 200 250 175 200 150 Avg 150 125 100 100 50 75 0 50 -50 -25 0 25 50 75 100 125 150 Tc(°C) -50 -25 0 25 50 75 100 125 150 Tc(°C) 11/15 1 1 VN750 / VN750S / VN750-B5 SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 e3 3.81 0.050 0.150 F 3.8 4 0.14 L 0.4 1.27 0.015 M 0.6 S L1 0.157 0.050 0.023 8 (max.) 0.8 1.2 0.031 0.047 12/15 1 1 VN750 / VN750S / VN750-B5 PENTAWATT (VERTICAL) MECHANICAL DATA DIM. mm. MIN. TYP A inch MAX. MIN. TYP. 4.8 C MAX. 0.189 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 H3 0.055 10.4 10.05 10.4 0.409 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 M1 4 Diam. 3.65 0.102 0.118 0.177 0.157 3.85 0.144 0.152 13/15 1 VN750 / VN750S / VN750-B5 P2PAK MECHANICAL DATA DIM. A mm. MIN. TYP 4.30 4.80 A2 0.03 0.23 C 1.17 1.37 D 2.40 2.80 D1 8.95 9.35 E 0.35 0.55 F 0.80 1.05 G 3.20 3.60 G1 6.60 7.00 H2 10.40 L 13.59 14.39 L2 1.27 1.40 L3 1.30 1 1.70 0.30 R V2 14/15 inch MAX. 0d 8d MIN. TYP. MAX. VN750 / VN750S / VN750-B5 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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