STMICROELECTRONICS VNV35NV04

VNB35NV04 / VNP35NV04
/ VNV35NV04 / VNW35NV04
®
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB35NV04
VNP35NV04
VNV35NV04
RDS(on)
Ilim
Vclamp
10 mΩ (*)
30 A
40 V
10
3
1
1
VNW35NV04
PowerSO-10™
D2PAK
(*) For PowerSO-10 only
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
3
3
1
2
2
1
TO-220
TO-247
ORDER CODES:
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
D2PAK
TO-220
PowerSO-10™
TO-247
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Over
Temperature
Linear
Current
Limiter
3
SOURCE
July 2003
FC01000
1/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS
VIN
IIN
RIN MIN
ID
IR
VESD1
Drain-source Voltage (VIN=0V)
Input Voltage
Input Current
Minimum Input Series Impedance
Drain Current
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
VESD2
Ptot
Tj
Tc
Tstg
PowerSO-10™
Value
D2PAK
TO-220
Internally Clamped
Internally Clamped
+/-20
4.7
Internally Limited
-30
4000
Unit
TO-247
V
V
mA
Ω
A
A
V
16500
125
125
125
Internally limited
Internally limited
-55 to 150
V
208
CONNECTION DIAGRAM (TOP VIEW)
SOURCE
SOURCE
N.C.
SOURCE
SOURCE
5
4
3
6
7
8
9
10
INPUT
INPUT
INPUT
INPUT
INPUT
2
1
11
DRAIN
(*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
DRAIN
IIN
RIN
INPUT
SOURCE
VIN
2/19
VDS
W
°C
°C
°C
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol
Rthj-case
Rthj-amb
(*) When
Parameter
PowerSO-10™
Thermal Resistance Junction-case}}} MAX
1
Thermal Resistance Junction-ambient MAX
50(*)
Value
D2PAK
1
50(*)
TO-220
1
50
TO-247
0.6
30
Unit
°C/W
°C/W
mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VINTH
IISS
VINCL
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
IDSS
Zero Input Voltage Drain
Current (VIN=0V)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VIN=0V; ID=15A
40
45
55
V
VIN=0V; ID=2mA
36
VDS=VIN; ID=1mA
0.5
V
VDS=0V; VIN=5V
100
IIN=1mA
6
IIN=-1mA
VDS=13V; VIN=0V; Tj=25°C
2.5
V
150
µA
6.8
8
-1.0
-0.3
30
VDS=25V; VIN=0V
75
V
µA
ON
Max
RDS(on)
Static Drain-source On
Resistance
Test Conditions
PowerSO-10
D2PAK
VIN=5V; ID=15A; Tj=25°C
10
TO-220 / TO-247
13
VIN=5V; ID=15A; Tj=150°C
20
24
Unit
mΩ
3/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
Min
VDD=13V; ID=15A
VDS=13V; f=1MHz; VIN=0V
Typ
Max
Unit
35
S
1300
pF
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
(di/dt)on
Turn-on Current Slope
Qi
Total Input Charge
Test Conditions
Min
VDD=15V; ID=15A
Vgen=5V; Rgen=RIN MIN=4.7Ω
(see figure 1)
VDD=15V; ID=15A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=15A
Vgen=5V; Rgen=RIN MIN=4.7Ω
VDD=12V; ID=15A; VIN=5V
Igen =2.13mA (see figure 5)
Typ
150
840
980
600
4
27
34
31
Max
500
2500
3000
1500
12
100
120
110
Unit
ns
ns
ns
ns
µs
µs
µs
µs
18
A/µs
118
nC
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
ISD=15A; VIN=0V
ISD=15A; dI/dt=100A/µs
Min
VDD=30V; L=200µH
Reverse Recovery Current (see test circuit, figure 2)
Typ
0.8
400
1.4
Max
7
Unit
V
ns
µC
A
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Tjsh
Tjrs
Igf
Eas
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=6V; VDS=13V
VIN=6V; VDS=13V
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
VIN=5V; VDS=13V; Tj=Tjsh
starting Tj=25°C; VDD=24V
VIN=5V; Rgen=RIN MIN=4.7Ω; L=24mH
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/19
2
Min
30
Typ
45
Max
60
Unit
A
µs
50
150
175
200
°C
135
10
15
20
°C
mA
1.7
J
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 25KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages is. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction
temperature
may
reach
the
overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig.1: Switching Time Test Circuit for Resistive Load
VD
Rgen
Vgen
ID
90%
tr
tf
10%
t
Vgen
td(on)
td(off)
t
Fig.2: Test Circuit for Diode Recovery Times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
25 Ω
D
Rgen
Vgen
VDD
I
OMNIFET
S
8.5 Ω
6/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig. 3: Unclamped Inductive Load Test Circuits
Fig. 4: Unclamped Inductive Waveforms
RGEN
VIN
PW
Fig. 5: Input Charge Test Circuit
VIN
Fig 6 : Thermal Impedance for TO-220
GEN
ND8003
Fig. 7:Thermal Impedance for TO-247
7/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
Rds(on) (mOhm)
950
50
Vin=2.5V
900
Vin=0V
Tj=-40ºC
40
850
Tj=25ºC
800
Tj=150ºC
30
750
20
700
650
10
0
5
10
15
20
25
30
35
0
1
2
Id (A)
PowerSO-10 Static Drain-Source On resistance Vs.
Input Voltage
4
5
6
D2PAK, TO-220 & TO-247 Static Drain-Source On
resistance Vs. Input Voltage
Rds(on) (mOhm)
Rds(on) (mOhm)
27.5
30
25
3
Id (A)
Id=15A
Id=7.5A
25
22.5
Tj=150ºC
Id=15A
Id=7.5A
20
20
Id=15A
Id=7.5A
17.5
Tj=150°C
15
15
Tj=25ºC
Id=15A
Id=7.5A
Id=15A
Id=7.5A
Id=15A
Id=7.5A
10
12.5
Tj=25°C
Tj=-40ºC
10
5
7.5
Tj=-40°C
0
5
2
2.5
3
3.5
4
4.5
5
5.5
6
2.5
6.5
3
3.5
4
4.5
5
5.5
6
6.5
Vin (V)
Vin (V)
PowerSO-10 Static Drain-Source On Resistance
Vs. Id
D2PAK, TO-220 & TO-247 Static Drain-Source On
Resistance Vs. Id
Rds(on) (mOhm)
Rds(on) (mOhm)
30
24
21
25
Tj=150ºC
18
Vin=5V
20
15
Tj=150ºC
12
15
Tj=25ºC
9
10
Tj=-40ºC
Tj=25ºC
Tj=-40ºC
Vin=5V
5
3
0
0
0
5
10
15
20
Id (A)
8/19
6
25
30
35
0
4
8
12
16
Id (A)
20
24
28
32
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Transconductance
Transfer Characteristics
Gfs (S)
Idon (A)
54
50
Tj=-40ºC
45
48
Vds=13V
42
36
Vds=13.5V
Tj=25ºC
40
Tj=150ºC
35
Tj=-40ºC
30
30
Tj=150ºC
25
24
20
18
15
Tj=25ºC
12
10
6
5
0
0
0
4
8
12
16
20
24
28
32
1
1.5
2
2.5
3
Id (A)
3.5
4
4.5
5
5.5
6
6.5
Vin (V)
Output Characteristics
Normalized On Resistance Vs. Temperature
Rds(on) (mOhm)
Id (A)
4
55
50
3.5
Vin=4V
45
Vin=4.5V
Vin=3.5V
Vin=5V
Id=15A
3
40
Vin=3V
2.5
35
30
2
25
1.5
20
15
1
Vin=2.5V
10
0.5
5
0
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Vds (V)
Turn On Current Slope
Turn On Current Slope
di/dt (A/us)
di/dt (A/us)
10
20
9
17.5
15
Vin=3.5V
Vdd=15V
Id=15A
8
Vin=5V
Vdd=15V
Id=15A
7
12.5
6
5
10
4
7.5
3
5
2
2.5
1
0
0
0
150
300
450
600
Rg (Ohm)
750
900
1050
0
125
250
375
500
625
750
875
1000 1125
Rg (Ohm)
9/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
Vin (V)
dV/dt (V/us)
8
160
140
7
Vds=12V
Id=15A
6
Vin=5V
Vdd=15V
Id=15A
120
5
100
4
80
3
60
2
40
1
20
0
0
0
25
50
75
100
125
150
0
175
150
300
450
600
750
900
Switching Time Resistive Load
Turn Off Drain-Source Voltage Slope
dV/dt (V/us)
T (us)
160
40
td(off)
35
140
Vin=3.5V
Vdd=15V
Id=15A
120
1050
Rg (Ohm)
Qg (nC)
Vdd=15V
Id=15A
Rg=4.7ohm
30
100
25
80
20
60
15
40
10
20
5
tf
tr
td(on)
0
0
0
150
300
450
600
750
900
0
1050
300
600
900
1200
1500
1800
2100
2400
Rg (Ohm)
Rg (Ohm)
Normalized Input Threshold Voltage Vs.
Temperature
Switching Time Resistive Load
Vinth (V)
T (ns)
2
1750
Vdd=15V
Id=15A
Rg=4.7ohm
tr
1500
1.75
1250
Vds=Vin
Id=1mA
1.5
td(off)
1.25
1000
1
750
0.75
tf
500
0.5
250
td(on)
0
0
3
3.5
4
4.5
5
Vin (V)
10/19
0.25
5.5
6
6.5
7
-50
-25
0
25
50
75
Tc (ºC)
100
125
150
175
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Current Limit Vs. Junction Temperature
Step Response Current Limit
Ilim (A)
Tdlim (us)
100
180
90
Vin=6V
Vds=13V
80
160
Vin=6V
140
70
60
120
50
100
40
30
80
20
60
10
40
0
-50
-25
0
25
50
75
Tc (ºC)
100
125
150
175
0
5
10
15
20
25
30
35
Vdd (V)
Derating Curve
11/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
M
DIA.
0.154
2.6
0.102
3.75
3.85
0.147
0.151
.
'
#
&
%
/
.
.
.
.
.
8
*
KC
&
)
(
8
(
(
.
12/19
MAX.
)
*
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
G
10.9
0.134
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia.
3.55
3.65
0.140
0.144
13/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10™ MECHANICAL DATA
mm.
DIM.
MIN.
A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
H (*)
h
L
L (*)
α
α (*)
inch
TYP
3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
MAX.
MIN.
3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232
1.35
1.40
14.40
14.35
0.049
0.047
0.543
0.545
1.80
1.10
8º
8º
0.047
0.031
0º
2º
1.27
TYP.
MAX.
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.295
0.240
0.248
0.050
1.25
1.20
13.80
13.85
0.50
0.053
0.055
0.567
0.565
0.002
1.20
0.80
0º
2º
0.070
0.043
8º
8º
(*) Muar only POA P013P
B
0.10 A B
10
H
E
E
E2
1
SEATING
PLANE
e
B
DETAIL "A"
A
C
0.25
h
E4
D
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
P095A
14/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
4.4
4.6
A1
2.49
2.69
A2
0.03
0.23
B
0.7
0.93
B2
1.14
1.7
C
0.45
0.6
C2
1.23
1.36
D
8.95
D1
E
10
E1
G
9.35
8
10.4
8.5
4.88
5.28
L
15
15.85
L2
1.27
1.4
L3
1.4
1.75
M
2.4
3.2
R
V2
0.4
0º
8º
P011P6
15/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 TUBE SHIPMENT (no suffix)
A
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
B
All dimensions are in mm.
C
16/19
50
1000
532
5.5
31.4
0.75
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10™ SUGGESTED PAD LAYOUT
TUBE SHIPMENT (no suffix)
14.6 - 14.9
CASABLANCA
B
10.8- 11
MUAR
C
6.30
C
A
A
0.67 - 0.73
10
9
1
9.5
2
3
B
0.54 - 0.6
All dimensions are in mm.
8
7
4
5
1.27
Base Q.ty Bulk Q.ty Tube length (± 0.5)
6
Casablanca
Muar
50
50
1000
1000
532
532
A
B
C (± 0.1)
10.4 16.4
4.9 17.2
0.8
0.8
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
600
600
330
1.5
13
20.2
24.4
60
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
24
4
24
1.5
1.5
11.5
6.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
17/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
16.90
C
12.20
5.08
1.60
B
3.50
9.75
All dimensions
are in millimeters
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
50
500
532
6
21.3
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
60
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
24
4
16
1.5
1.5
11.5
6.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
18/19
500mm min
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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19/19