WS57C256F MILITARY HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 55 ns Access Time. Two major features of the WS57C256F are its Low Power and High Speed. While operating in a TTL environment it consumes less than 120 mA while cycling at full speed. Additionally, the WS57C256F can be placed in a standby mode which drops operating current below 5 mA in a TTL environment and 500 µA in a CMOS environment. The WS57C256F also has exceptional output drive capability. It can source 4 mA and sink 16 mA per output. The WS57C256F is configured in the standard EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs. PIN CONFIGURATION MODE SELECTION Read Output Disable CE/ PGM OE A9 A0 VIL VIL X X VCC VCC DOUT X VIH X X VCC VCC High Z TOP VIEW VPP VCC OUTPUTS Chip Carrier CERDIP A7 A12 VPP NC VCC A14 A13 PINS MODE Standby VIH X X X VCC VCC High Z DIN Program VIL VIH X X VPP 2 VCC Program Verify X VIL X X VPP 2 VCC DOUT Program Inhibit VIH VIH X X VPP2 VCC High Z VIL VIL VH2 VIL VCC VCC 23 H4 VIL VIL VH2 VIH VCC VCC EO H 5 Signature3 NOTES: 1. X can be VIL or VIH. 2. VIH = VPP = 12.75 ± 0.25 V. 3. A1 – A8, A10 – A14 = VIL. A6 A5 A4 A3 A2 A1 A0 NC O0 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2 GND 4 3 2 NC O3 O4 O5 A8 A9 A11 NC OE A10 CE/PGM O7 O6 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE/PGM O7 O6 O5 O4 O3 4. Manufacturer Signature. 5. Device Signature. PRODUCT SELECTION GUIDE PARAMETER WS57C256F-55 WS57C256F-70 Address Access Time (Max) 55 ns 70 ns Output Enable Time (Max) 25 ns 30 ns Return to Main Menu 4-17 WS57C256F ORDERING INFORMATION PART NUMBER SPEED (ns) PACKAGE TYPE OPERATING PACKAGE TEMPERATURE DRAWING RANGE WSI MANUFACTURING PROCEDURE WS57C256F-55CMB 55 32 Pad CLLCC C2 Military MIL-STD-883C WS57C256F-55DMB 55 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C WS57C256F-55TMB 55 28 Pin CERDIP, 0.3" T2 Military MIL-STD-883C WS57C256F-70CMB* 70 32 Pad CLLCC C2 Military MIL-STD-883C WS57C256F-70DMB* 70 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C NOTES: The actual part marking will not include the initials "WS." *SMD product. See page 4-1 for DESC SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57C256F is programmed using Algorithm D shown on page 5-9. For complete data sheet and electrical specifications see page 3-13. Return to Main Menu 4-18