TLP531,TLP532 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP531,TLP532 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP531 and TLP532 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP532 is no−base internal connection for high−EMI environments. · Collector−emitter voltage: 55 V (min.) · Current transfer ratio: 50% (min.) Rank GB: 100% (min.) · Isolation voltage: 2500 Vrms (min.) · UL recognized: UL1577, file no. E67349 Pin Configurations (top view) TOSHIBA 11−7A8 Weight: 0.4g 1 2002-09-25 TLP531,TLP532 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 70 mA ∆IF / °C 0.93 mA / °C Peak forward current (100 µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 55 V Collector-base voltage (TLP531) VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage (TLP531) VEBO 7 V Forward current Detector LED Forward current derating (Ta ≥ 50°C) Collector current IC 50 mA Power dissipation PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ∆PT / °C -2.5 mW / °C BVS 2500 Vrms Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., R.H.≤ 60%) Recommends Operating Conditions Characteristic Supply voltage Symbol Min. Typ. Max. Unit VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature 2 2002-09-25 TLP531,TLP532 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 µA Capacitance CT V = 0, f = 1MHz ― 30 ― pF Collector-emitter breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V Emitter-collector breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V Collector-base breakdown voltage (TLP531) V (BR) CBO IC = 0.1mA 80 ― ― V Emitter-base breakdown voltage (TLP531) V (BR) EBO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA VCE = 24V, Ta = 85°C ― 2 50 µA V = 0, f = 1MHz ― 10 ― pF Min. Typ. Max. Unit 50 200 600 Rank Y 50 ― 150 Rank YG 50 ― 300 Rank GR 100 ― 300 Rank GB 100 ― 600 Rank BL 200 ― 600 ― ― 0.4 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition IF = 5mA, VCE = 5V Current transfer ratio Collector-emitter saturation voltage IC / IF VCE (sat) IC = 2.4mA, IF = 8mA 3 % V 2002-09-25 TLP531,TLP532 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1MHz Isolation resistance RS VS = 500V, R.H.≤ 60% Isolation voltage BVS AC, 1 minute Min. Typ. Max. Unit ― 0.8 ― pF 5 ´ 1010 1014 ― Ω 2500 ― ― Vrms Unit Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time tON Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF Fig. 1 Test Condition VCC = 10V IC = 2mA RL = 100Ω RL = 1.9kΩ RBE = open VCC = 5V, IF = 16mA (Fig.1) RL = 1.9Ω RBE = 220kΩ (TLP531) VCC = 5V, IF = 16mA (Fig.1) Min. Typ. Max. ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 15 ― ― 25 ― ― 2 ― ― 12 ― ― 20 ― µs µs µs Switching time test circui 4 2002-09-25 TLP531,TLP532 5 2002-09-25 TLP531,TLP532 6 2002-09-25 TLP531,TLP532 7 2002-09-25 TLP531,TLP532 8 2002-09-25 TLP531,TLP532 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25