TLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP570,TLP571 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP570 and TLP571 consist of a darlington connected photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP570 is no−base internal connection for high−EMI environments. l Collector−emitter voltage: 35V (min.) l Current transfer ratio: 1000% (min.) l Isolation voltage: 2500Vrms (min.) l UL recognized: UL1577, file no. E67349 Pin Configurations (top view) TOSHIBA 1 11−7A8 2002-09-25 TLP570,TLP571 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 70 mA ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 35 V Collector-base voltage (TLP571) VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage (TLP571) VEBO 7 V Collector current IC 150 mA Power dissipation PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsold 260 °C Total package power dissipation PT 250 mW ∆PT / °C -2.5 mW / °C BVS 2500 Vrms Forward current Detector LED Forward current derating (Ta ≥ 25°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 1) (Note 1) Device considered a two terminal: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommends Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― ― 50 mA Topr -25 ― 85 °C Operating temperature 2 2002-09-25 TLP570,TLP571 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA 35 ― ― V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V Collector-base breakdown voltage (TLP571) V(BR)CBO IC = 0.1 mA 80 ― ― V Emitter-base breakdown voltage (TLP571) V(BR)EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 200 nA VCE = 24 V, Ta = 85°C ― ― 300 µA Collector dark current ICEO Collector dark current (TLP571) ICER VCE = 24 V, Ta = 85°C RBE = 10 MΩ ― 0.5 10 µA Collector dark current (TLP571) ICBO VCB = 10 V ― 0.01 ― nA DC forward current gain (TLP571) hFE VCE = 5 V, IC = 10 mA ― 50k ― ― Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF MIn. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Base photo-current (TLP571) Collector-emitter saturation voltage Symbol Test Condition IC / IF IF = 1 mA, VCE = 1 V 1000 2000 ― % IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― % IPB IF = 1 mA, VCB = 1 V ― 2 ― µA IC = 10 mA, IF = 1 mA ― ― 1.0 IC = 100 mA, IF = 10 mA 0.3 ― 1.2 VCE (sat) 3 V 2002-09-25 TLP570,TLP571 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 10 5×10 AC, 1 minute Isolation voltage Min. 14 10 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Vdc Min. Typ. Max. Unit ― 40 ― ― 30 ― ― 45 ― ― 35 ― ― 5 ― ― 20 ― ― 100 ― ― 5 ― ― 15 ― ― 60 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time tON Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10 V IC = 10 mA RL = 100Ω RL = 180Ω RBE = open VCC = 10 V, IF = 10 mA (Fig.1) RL = 180Ω RBE = 10MΩ (TLP571) VCC = 10 V, IF = 10 mA (Fig.1) µs µs µs Fig. 1 Switching time test circuit 4 2002-09-25 TLP570,TLP571 5 2002-09-25 TLP570,TLP571 6 2002-09-25 TLP570,TLP571 7 2002-09-25 TLP570,TLP571 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-09-25