TOSHIBA TLP372

TLP371,TLP372
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
Unit in mm
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no−base internal connection for high−EMI environments.
•
Current transfer ratio: 1000% (min) (IF = 1mA)
•
Isolation voltage: 5000 Vrms (min)
•
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.4g
11−7A8
Pin Configurations (top view)
TLP372
TLP371
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
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TLP371,TLP372
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
60
mA
ΔIF / °C
−0.7
mA / °C
Peak forward current (100μs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
300
V
Collector−base voltage (TLP371)
VCBO
300
V
Emitter−collector voltage
VECO
0.3
V
Emitter−base voltage (TLP371)
VEBO
7
V
Collector current
IC
150
mA
Power dissipation
PC
300
mW
ΔPC / °C
−3.0
mW / °C
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature (10 s)
Tsold
260
°C
PT
350
mW
ΔPT / °C
−3.5
mW / °C
BVS
5000
Vrms
Forward current
Detector
LED
Forward current derating (Ta ≥ 39°C)
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC, 1min., R.H. ≤ 60%)
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
―
―
200
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
―
120
mA
Topr
−25
―
85
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP371,TLP372
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.1 mA
300
―
―
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
0.3
―
―
V
Collector−base
breakdown voltage (TLP371)
V(BR) CBO
IC = 0.1 mA
300
―
―
V
Emitter−base
breakdown voltage (TLP371)
V(BR) EBO
IE = 0.1 mA
7
―
―
V
VCE = 200 V
―
10
200
nA
VCE = 200 V
Ta = 85 °C
―
―
20
μA
Collector dark current
ICEO
Collector dark current (TLP371)
ICER
VCE = 200 V
Ta = 85 °C,
RBE = 10 MΩ
―
0.5
10
μA
Collector dark current (TLP371)
ICBO
VCE = 200 V
―
0.1
―
nA
DC forward current gain (TLP371)
hFE
VCE = 5 V,
IC = 10 mA
―
7000
―
―
Capacitance (collecter to emitter)
CCE
V = 0, f = 1 MHz
―
10
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current (TLP371)
Collector−emitter
saturation voltage
Symbol
Test Condition
MIn
Typ.
Max
Unit
%
IC / IF
IF = 1 mA, VCE = 1 V
1000
4000
―
IC / IF (sat)
IF = 10 mA, VCE = 1 V
500
―
―
%
IPB
IF = 1 mA, VCB = 1 V
―
6
―
μA
IC = 10 mA, IF = 1 mA
―
―
1.0
IC = 100 mA, IF = 10 mA
0.3
―
1.2
VCE (sat)
3
V
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TLP371,TLP372
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V
BVS
Typ.
Max
Unit
―
0.8
―
pF
―
Ω
10
5×10
AC, 1 minute
Isolation voltage
Min
10
14
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Vdc
Min
Typ.
Max
Unit
―
40
―
―
15
―
―
50
―
―
15
―
―
3
―
―
45
―
―
90
―
―
5
―
―
40
―
―
80
―
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
ton
Turn−off time
toff
Turn−on time
tON
Storage time
ts
Turn−off time
tOFF
Turn−on time
tON
Storage time
ts
Turn−off time
tOFF
Test Condition
VCC = 10 V
IC = 10 mA
RL = 100Ω
RL = 180Ω
RBE = OPEN
VCC = 5 V, IF = 16 mA
(Fig.1)
RL = 180Ω
RBE = 10 MΩ(TLP371)
VCC = 10 V, IF = 16 mA
(Fig.1)
μs
μs
μs
Fig.1: Switching time test circuit
IF
RL
RBE
VCC
VCE
IF
VCE
tON
4
ts
VCC
9V
1V
tOFF
2007-10-01
TLP371,TLP372
IF – Ta
80
60
40
20
0
−20
0
20
40
PC – Ta
400
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
100
60
80
100
320
240
160
80
0
−20
120
0
Ambient temperature Ta (℃)
IFP – DR
5000
40
60
100
80
120
IF – VF
Ta = 25°C
IF (mA)
50
1000
500
Forward current
Pulse forward current
IFP (mA)
100
Pulse width
≤ 100μs
Ta = 25°C
3000
20
Ambient temperature Ta (℃)
300
100
50
30
30
10
5
3
1
0.5
0.3
10
3
10
−3
3
10
−2
3
10
−1
3
10
0
0.1
0.6
Duty cycle ratio DR
0.8
1.0
1.2
Forward
ΔVF / ΔTa
– IF
1.8
2.6
3.0
IFP – VFP
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
1.6
1000
Pulse forward current IFP (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / ℃)
−3.2
1.4
voltage VF (V)
500
300
100
50
30
10
Pulse width ≤ 10μs
5
Repetitive frequency
3
=100Hz
Ta = 25°C
0.3 0.5
1
Forward
3
current
10
IF
30
1
0.6
50
(mA)
1.0
1.4
Pulse forward
5
1.8
2.2
voltage VFP (V)
2007-10-01
TLP371,TLP372
IC – VCE
10mA
140
4mA
I C – IF
300
Ta = 25°C
VCE = 1.2V
Collector current IC (mA)
Collector current IC (mA)
1V
2mA
120
100
80
1mA
60
40
50
30
10
5
3
IF = 0.5mA
20
100
Ta = 25°C
0
0.6
0.8
1.0
1.2
1.4
1.6
Collector−emitter voltage
1.8
1
0.2
2.0
0.5
1
VCE (V)
Switching Time – RL
OFF (IF = 16mA)
100
t
OFF (IF = 1.6mA)
50
30
t
ON (IF = 1.6mA)
10
5
30
50
Ta = 25°C
10000
5000
3000
VCE = 1.2V
1000
1V
500
300
3
t
1
30
50
30000
Current transfer ration IC / IF (%)
(μs)
Switching time
t
30
IF (mA)
50000
Ta = 25°C
VCC = 10V
300
10
current
I C / IF – I F
1000
500
3
Forward
50
100
300 500
Load
ON (IF = 16mA)
1K
3K
5K
100
0.3
10K
resistance RL (Ω)
0.5
3
1
Forward
6
5
current
10
IF (mA)
2007-10-01
TLP371,TLP372
10
ICEO – VCE
1
ICEO – Ta
Ta = 25°C
10
10
Collector dark current ICEO (μA)
Collector dark current ICEO (μA)
RBE = OPEN
0
RBE = 10 MΩ
（TLP371）
10
10
0
−1
VCE = 200V
10
10
1
150V
−2
80V
−1
10
10
30
50
300
100
Collector−emitter voltage
−3
500
0
20
VCE (V)
40
Ambient temperature Ta
IC – Ta
VCE = 1V
IF = 10mA
100
60
1mA
20
0
(℃)
VCE = 1V
1.2
80
40
100
IC – Ta
1.4
Collector current IC
Collector current IC (mA)
120
80
60
IF = 10mA
1.0
1mA
0.8
0.6
0.4
−20
0.2
0
20
40
60
Ambient temperature Ta
80
100
(℃)
−20
0
20
40
Ambient temperature Ta
7
60
80
100
(℃)
2007-10-01
TLP371,TLP372
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01