SDBS12 THRU SDBS110 1.0 AMP. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 DBS .047(1.20) .040(1.02) .205(5.2) .195(5.0) Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band .404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .013(0.33) .0088(0.22) .130(3.30) .120(3.05) .255(6.5) .245(6.2) .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SDB SDB SDB Type Number SDB SDB SDB SDB 12 13 14 15 16 19 110 SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 90 63 90 100 70 100 Units V V V I(AV) 1.0 A IFSM 30 A VF 0.5 0.75 0.80 V 5.0 0.05 0.5 mA mA pF ℃/W ℃/W ℃ ℃ 0.4 IR 10 Cj 50 RθJL 28 88 RθJA Operating Temperature Range TJ -65 to +125 -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) - 50 - RATINGS AND CHARACTERISTIC CURVES (SDBS12 THRU SDBS110) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 RESISTIVE OR INDUCTIVE LOAD SDBS15-SDBS110 SDBS12- SDBS14 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 1.0 AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method 40 30 20 10 0 50 60 70 80 90 100 110 120 130 140 150 160 1 170 10 o LEAD TEMPERATURE. ( C) 100 NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 50 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) Tj=25 0C 10.0 SDBS15-SDBS16 SDBS12-SDBS14 1 SDBS19-SDBS110 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE SDBS12-SDBS14 100 Tj=100 0C 10 SDBS15-SDBS16 1 SDBS19-SDBS110 0.1 Tj=25 0C SDBS12-SDBS14 0.01 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) 400 Tj=25 0C f=1.0MHz Vsig=50mVp-p 100 .1 1.0 20 40 SDBS15-SDBS110 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 10 0 10 100 REVERSE VOLTAGE. (V) - 51 - 140