TSC2412 General Purpose NPN Transistor BVCEO = 50V Pin assignment: 1. Base 2. Emitter 3. Collector Ic = 150mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 50mA / 5mA Features Ordering Information Driver stage of AF amplifier. Part No. General purpose switching application Packing TSC2412CX Structure Package Marking 3kpcs / Reel SOT-23 C4 Epitaxial planar type. Complementary to TSA1037CX Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 60V V Collector-Emitter Voltage VCEO 50V V Emitter-Base Voltage VEBO 7 V Collector Current IC 150 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 o C - 55 to +150 o C Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 380uS, Duty <= 2% TSTG Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit IC = 100uA, IE = 0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 7 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 uA Static Collector-Base Voltage Emitter Cutoff Current VEB = 7V, IC = 0 Collector-Emitter Saturation Voltage IC / IB = 50mA / 5mA DC Current Transfer Ratio VCE = 6V, IC = 1mA Transition Frequency VCE =12V, IC=2mA, f=100MHz Output Capacitance VCB = 5V, f=1MHz IEBO -- -- 0.1 uA VCE(SAT)1 -- 0.2 0.4 V hFE 180 -- 820 fT 80 180 -- MHz Cob -- 2 3.5 pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank Range Note: * is Typical TSC2412 R S* T 180 - 390 270 – 560 410 - 820 1-1 2003/12 rev. A Electrical Characteristics Curve TSC2412 2-2 2003/12 rev. A SOT-23 Mechanical Drawing A B F A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 0.30 0.50 0.012 0.020 1.70 2.30 0.067 0.091 0.25 0.65 0.010 0.026 1.2 1.60 0.047 0.063 F G 0.89 0.08 DIM E G D TSC2412 1.30 0.17 0.035 0.003 C 3-3 2003/12 rev. A 0.051 0.006