TS13001 High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. Part No. High speed switching Structure Packing TS13001CT Package Bulk TO-92 Silicon triple diffused type. NPN silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 500V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V IC 0.1 A Collector Current DC Pulse Collector Power Dissipation TO-92 Operating Junction Temperature 0.3 PD 0.6 +150 C - 55 to +150 o C TJ Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 5mS, Duty <= 10% TSTG W o Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 500 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 500V, IE = 0 ICBO -- -- 100 uA Emitter Cutoff Current VEB = 7V, IC = 0 Collector-Emitter Saturation Voltage IC / IB = 50mA / 10mA IEBO -- -- 0.01 uA VCE(SAT) -- -- 0.5 V DC Current Gain VCE = 5V, IC = 20mA hFE 10 -- 40 Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 4 -- pF Storage Time VCE = 250V, IC = 5 Ib, ts -- -- 2.0 uS Fall Time Ib1=Ib2=40mA tf -- -- 0.8 Note : pulse test: pulse width <=5mS, duty cycle <=10% TS13001 1-2 2003/12 rev. B TO-92 Mechanical Drawing A DIM B A B C E C H F TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.30 4.70 4.70 0.169 0.169 0.185 0.185 14.30(typ) 0.563(typ) D 0.43 0.49 0.017 0.019 E F 2.19 3.30 2.81 3.70 0.086 0.130 0.111 0.146 G 2.42 2.66 0.095 0.105 H 0.37 0.43 0.015 0.017 G D TS13001 2-2 2003/12 rev. B