TSC TS13001

TS13001
High Voltage NPN Transistor
BVCEO = 400V
BVCBO = 500V
Ic = 0.1A
VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA
Pin assignment:
1. Emitter
2. Collector
3. Base
Features
—
Ordering Information
High voltage.
Part No.
— High speed switching
Structure
—
Packing
TS13001CT
Package
Bulk
TO-92
Silicon triple diffused type.
— NPN silicon transistor
Absolute Maximum Rating (Ta = 25 oC
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
500V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
9
V
IC
0.1
A
Collector Current
DC
Pulse
Collector Power Dissipation
TO-92
Operating Junction Temperature
0.3
PD
0.6
+150
C
- 55 to +150
o
C
TJ
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
TSTG
W
o
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10mA, IB = 0
BVCBO
500
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 500V, IE = 0
ICBO
--
--
100
uA
Emitter Cutoff Current
VEB = 7V, IC = 0
Collector-Emitter Saturation Voltage
IC / IB = 50mA / 10mA
IEBO
--
--
0.01
uA
VCE(SAT)
--
--
0.5
V
DC Current Gain
VCE = 5V, IC = 20mA
hFE
10
--
40
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
4
--
pF
Storage Time
VCE = 250V, IC = 5 Ib,
ts
--
--
2.0
uS
Fall Time
Ib1=Ib2=40mA
tf
--
--
0.8
Note : pulse test: pulse width <=5mS, duty cycle <=10%
TS13001
1-2
2003/12 rev. B
TO-92 Mechanical Drawing
A
DIM
B
A
B
C
E
C
H
F
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.30
4.70
4.70
0.169
0.169
0.185
0.185
14.30(typ)
0.563(typ)
D
0.43
0.49
0.017
0.019
E
F
2.19
3.30
2.81
3.70
0.086
0.130
0.111
0.146
G
2.42
2.66
0.095
0.105
H
0.37
0.43
0.015
0.017
G
D
TS13001
2-2
2003/12 rev. B