TSD882 Low Vce(sat) NPN Transistor TO-126 Pin assignment: BVCEO = 50V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A TO-126 1. Emitter 2. Collector 3. Base Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics Packing TSD882CK Structure Package Bulk Pack TO-126 Epitaxial planar type. Complementary to TSB772 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50V V Collector-Emitter Voltage VCEO 50V V Emitter-Base Voltage VEBO 5 V 3 A Collector Current DC IC Pulse Collector Power Dissipation TO-126 Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS 7 (note 1) PD 1.0 W TJ +150 o TSTG - 55 to +150 o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 50uA, IE = 0 BVCBO 50 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 40V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- 1 uA Collector-Emitter Saturation Voltage IC / IB = 2.0A / 0.2A VCE(SAT) -- 0.25 0.5 V DC Current Transfer Ratio VCE = 2V, IC = 1A hFE 160 -- 500 Transition Frequency VCE = 5V, IC = 100mA, fT -- 90 -- MHz 45 -- pF f = 100MHz Output Capacitance VCB = 10V, f=1MHz Cob Note : pulse test: pulse width <=380uS, duty cycle <=2% TSD882 1-1 2003/12 rev. B Electrical Characteristics Curve TSD882 2-2 2003/12 rev. B TO-126 Mechanical Drawing A I B DIM D A B C D E F G H I MIN MAX 8.00 (typ) 4.20 (typ) 10.58 11.00 2.00 (typ) 12.00(typ) 2.50(typ) 0.74 0.78 0.8 (typ) 2.56 3.00 MIN MAX 0.315(typ) 0.165 (typ) 0.417 0.433 0.079 (typ) 0.472(typ) 0.098 (typ) 0.029 0.031 0.031(typ) 0.101 0.118 J K 0.38 0.50 1.1 (typ) 0.015 0.020 0.043 (typ) C H 1mm E G F TO-126 DIMENSION MILLIMETERS INCHES J K TSD882 3-3 2003/12 rev. B