UTC PCR406 SCR DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature SYMBOL VDRM TEST CONDITION Tj=40 to 125°C (RGK =1kΩ) IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD Tc=40°C Half Cycle=180, Tc=40°C IGR=10uA 10us Max. 20ms Max. 1.6mm from case 10s Max. RATING UNITS 400 300 0.8 0.5 1 0.1 150 -40~125 -40~125 250 V A A V A mW °C °C °C MAX UNIT 0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6 mA µA V ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise UTC SYMBOL IDRM IDRM VT VT(TO) Rt IGT VGT IH IL DV/DT TEST CONDITIONS VDRM(RGK=1KΩ), Tj=125°C VDRM(RGK=1KΩ), Tj=25°C IT=0.4A IT=0.8A Tj=125°C Tj=125°C VD=7V VD=7V RGK=1KΩ RGK=1KΩ VD=0.67*VDRM(RGK=1KΩ), Tj=125°C MIN V m µA V mA mA V/µs UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-010,A UTC PCR406 SCR PARAMETER SYMBOL Critical rate of current rise DV/DT Gate controlled delay time Commutated turn-off time TGD TG TEST CONDITIONS MIN IG=10mA, dIG/dt=0.1A/µs, Tj=125°C IG=10mA, dIG/dt=0.1A/µs, Tj=85°C, VD=0.67*VDRM, VR=35V, IT=IT(AV) MAX UNIT A/µs µs µs 2.2 200 CLASSIFICATION OF IGT RANK RANGE UTC B 50-100µA C 100-200µA AA 8-15µA AB 15-20µA AC 20-25µA AD 25-50µA UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-010,A