AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 TO-92 Silicon Planar pnpn Thyristor 1. CATHODE FEATURES 2. GATE Current-IGT: 120 µA ITRMS: 0.6 A 3. ANODE 1 2 3 VDRM: 400 V Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions On state voltage VTM Gate trigger voltage Repetitive peak off-state voltage MAX UNIT ITM=0.6A 1.7 V VGTF VAK=7V 0.8 V VDRM IDRM= 10µA IH IHL= 20mA , Av = 7 V Holding current Gate trigger current MIN 400 V 5 mA A2 5 15 µA A1 15 30 µA A-1 30 45 µA A-2 45 60 µA A 60 80 µA B 80 120 µA IGTF VAR=7V