AOU404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications). AOU404L is a Green Product ordering option. AOU404 and AOU404L are electrically identical. VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 mΩ (VGS = 20V) @ 5A RDS(ON) < 140 mΩ (VGS = 10V) RDS(ON) < 165 mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Units V ±25 V 10 TC=100°C Pulsed Drain Current Avalanche Current Maximum 75 10 IAR 10 A EAR 15 mJ 20 20 PD TC=100°C Junction and Storage Temperature Range A ID IDM W 10 TJ, TSTG °C -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Steady-State Symbol RθJA Typ 115 Max 140 Units °C/W Maximum Junction-to-Case B Steady-State RθJC 4.5 7.5 °C/W Alpha & Omega Semiconductor, Ltd. AOU404 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=10mA, VGS=0V 1 TJ=55°C 5 VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=20V, ID=5A TJ=125°C Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 3 V 100 130 180 220 A mΩ 140 mΩ 165 mΩ VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 2.4 105 IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Reverse Transfer Capacitance nA 120 Forward Transconductance Crss 100 VGS=4.5V, ID=2A VSD Coss µA VGS=10V, ID=5A gFS IS Units V VDS=60V, VGS=0V Gate-Body leakage current Static Drain-Source On-Resistance Max 75 VGS(th) RDS(ON) Typ 9 0.79 293 VGS=0V, VDS=30V, f=1MHz S 1 V 10 A 350 pF 51 pF 20 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=5A pF 2.2 3 Ω 5.2 6.5 nC 2.46 3.5 nC Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 1.34 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time 2.3 ns tD(off) Turn-Off DelayTime 14.7 ns VGS=10V, VDS=37.5V, RL=7.5Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 27 1.7 ns 30 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 10V 25 7V 5V 6 125°C ID(A) ID (A) 20 VDS=5V 8 6V 15 4.5V 4 25°C 10 VGS=4V 2 5 0 0 0 1 2 3 4 2 5 2.5 2.2 200 2 Normalized On-Resistance 220 RDS(ON) (mΩ) 180 VGS=4.5V 160 140 VGS=10V 120 VGS=20V 100 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=20V, 5A VGS=10V, 5A 1.8 1.6 VGS=4.5V, 2A 1.4 1.2 1 80 0 2 4 6 8 0.8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 300 ID=5A 260 1.0E+00 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 220 180 140 125°C 1.0E-02 25°C 1.0E-03 25°C 100 1.0E-04 60 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 Ciss 300 Capacitance (pF) VGS (Volts) 350 VDS=37.5V ID=5A 8 6 4 250 200 150 Coss 100 2 Crss 50 0 0 0 2 4 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 1ms 10ms 1.0 DC 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance 30 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W TJ(Max)=175°C TA=25°C 120 80 40 0.1 1 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 Power (W) ID (Amps) 10µs 0.1 10 200 TJ(Max)=175°C, TA=25°C 10.0RDS(ON) limited 5 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 tA = 10 L ⋅ ID Power Dissipation (W) ID(A), Peak Avalanche Current 12 BV − VDD 8 6 4 TA=25°C 2 0.0001 0.001 10 5 12 10 8 6 4 2 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability Current rating ID(A) 15 0 0 0.00001 0 20 175 175